Search Type: US Publications
NOT aclm/(("silicon carbide" or sic) and (pin or pn) and diode$) AND aclm/defect$ AND spec/(("silicon carbide" or sic) and (pin or pn) and diode$)

Classification Number Url PMD Assignee Assignee Loc Inventor(s) Inventor Loc(s) Filing Date Issued Date App Contact Info
20050003572 Method for fabricating a plurality of semiconductor chips 20050003572Osram Opto Semiconductors GmbHRegensburg, DEHahn, Berthold:; Harle, VolkerHemau, DE:Laaber, DEApril 30, 2004January 6, 2005COHEN, PONTANI, LIBERMAN & PAVANE; Suite 1210; 551 Fifty Avenue; New York; NY; 10176; US;
20040237879 Single crystal silicon carbide and method for producing the same 20040237879N/AN/AKaneko, Tadaaki:; Asaoka, Yasushi:; Sano, NaokatsuSanda-shi, JP:Sanda-shi, JP:Sanda-shi, JPJune 30, 2004December 2, 2004OBLON, SPIVAK, MCCLELLAND, MAIER & NEUSTADT, P.C.; 1940 DUKE STREET; ALEXANDRIA; VA; 22314; US;
20040227165 Si/C superlattice useful for semiconductor devices 20040227165NANODYNAMICS, INC.N/AWang, Chia Gee:; Tsu, RaphaelNew York, NY:Cornelius, NCApril 14, 2004November 18, 2004LADAS & PARRY; 26 WEST 61ST STREET; NEW YORK; NY; 10023; US;
20040192016 Method for fabricating a plurality of semiconductor bodies, and electronic semiconductor body 20040192016Osram Opto Semiconductors GmbHRegensburg, DEHarle, Volker:; Lugauer, Hans-Jurgen:; Miller, Stephan:; Bader, StefanLaaber, DE:Sinzing, DE:Regensburg, DE:Eilsbrunn, DEFebruary 17, 2004September 30, 2004COHEN, PONTANI, LIEBERMAN & PAVANE; Suite 1210; 551 Fifth Avenue; New York; NY; 10176; US;
20040144999 Integrated circuit device 20040144999N/AN/ALi, Chou H.South Pasadena, FLJanuary 20, 2004July 29, 2004Matthew A. Pequignot, Esquire; Hall, Priddy, Myers & Vande Sande; Ste. 200; 10220 River Road; Potomac; MD; 20854; US;
20040110349 Methods of testing/stressing a charge trapping device 20040110349N/AN/AKing, Tsu-JaeFremont, CADecember 17, 2002June 10, 2004J. NICHOLAS GROSS, ATTORNEY AT LAW; 726 DUBOCE AVE.; SAN FRANCISCO; CA; 94117; US;
20040110336 Charge trapping device & method of forming the same 20040110336N/AN/AKing, Tsu-JaeFremont, CADecember 9, 2002June 10, 2004J. NICHOLAS GROSS, ATTORNEY AT LAW; 726 DUBOCE AVE.; SAN FRANCISCO; CA; 94117; US;
20040036010 Photoconductor on active pixel image sensor 20040036010N/AN/AHsieh, Tzu-Chiang:; Chao, CalvinFremont, CA:Cupertino, CAAugust 26, 2003February 26, 2004IOHN R. ROSS; TREX ENTERPRISES; 10455 PACIFIC CENTER CT.; SAN DIEGO; CA; 92121; US;
20030213964 III-V Nitride homoepitaxial material of improved MOVPE epitaxial quality (surface texture and defect density) formed on free-standing (Al,In,Ga)N substrates, and opto-electronic and electronic devices comprising same 20030213964N/AN/AFlynn, Jeffrey S.:; Brandes, George R.:; Vaudo, Robert P.:; Keogh, David M.:; Xu, Xueping:; Landini, Barbara E.Litchfield, CT:Southbury, CT:New Milford, CT:La Jolla, CA:Stamford, CT:North Attleboro, MADecember 6, 2002November 20, 2003ATMI, INC.; 7 COMMERCE DRIVE; DANBURY; CT; 06810; US;
20030145783 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate 20030145783Sumitomo Electric Industries, Ltd.N/AMotoki, Kensaku:; Hirota, Ryu:; Okahisa, Takuji:; Nakahata, SeijiHyogo, JP:Hyogo, JP:Hyogo, JP:Hyogo, JPOctober 8, 2002August 7, 2003McDERMOTT, WILL & EMERY; 600 13th Street, N.W.; Washington; DC; 20005-3096; US;
20030141502 Method of epitaxial-like wafer bonding at low temperature and bonded structure 20030141502ZiptronixResearch Triangle Park, NCTong, Qin-YiDurham, NCFebruary 5, 2003July 31, 2003OBLON, SPIVAK, MCCLELLAND, MAIER & NEUSTADT, P.C.; 1940 DUKE STREET; ALEXANDRIA; VA; 22314; US;
20030089906 Semiconductor device and method for fabricating the same 20030089906MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.Osaka, JPUeda, TetsuzoOsaka, JPNovember 13, 2002May 15, 2003NIXON PEABODY, LLP; 8180 GREENSBORO DRIVE; SUITE 800; MCLEAN; VA; 22102; US;
20030080842 Minimizing degradation of SiC bipolar semiconductor devices 20030080842N/AN/ASumakeris, Joseph J.:; Singh, Ranbir:; Paisley, Michael James:; Mueller, Stephan Georg:; Hobgood, Hudson M.:; Carter, Calvin H. JR.:; Burk, Albert Augustus JR.Apex, NC:Apex, NC:Garner, NC:Durham, NC:Pittsboro, NC:Cary, NC:Chapel Hill, NCOctober 26, 2001May 1, 2003SUMMA & ALLAN, P.A.; 11610 NORTH COMMUNITY HOUSE ROAD; SUITE 200; CHARLOTTE; NC; 28277; US;
20030070607 Method for producing group III nitride compound semiconductor 20030070607Toyoda Gosei Co., Ltd.Aichi-ken, JPKoike, Masayoshi:; Watanabe, HiroshiAichi-ken, JP:Aichi-ken, JPOctober 11, 2002April 17, 2003McGinn & Gibb, PLLC; Suite 200; 8321 Old Courthouse Road; Vienna; VA; 22182-3817; US;
20030034547 Semiconductor structures and devices utilizing the formation of a compliant substrate for materials used to form the same including dynamic logic with local storage elements and a method of operating same 20030034547MOTOROLA, INC.Schaumburg, ILJohnson, Timothy J.Mundelein, ILAugust 16, 2001February 20, 2003OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20030026310 Structure and method for fabrication for a lighting device 20030026310MOTOROLA, INC.Schaumburg, ILValliath, GeorgeBuffalo Grove, ILAugust 6, 2001February 6, 2003OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20030024471 Fabrication of semiconductor structures and devices forms by utilizing laser assisted deposition 20030024471MOTOROLA, INC.Schaumburg, ILTalin, Albert Alec:; Curless, Jay A.:; Droopad, Ravindranath:; Yamamoto, JoyceScottsdale, AZ:Tempe, AZ:Chandler, AZ:Chandler, AZAugust 6, 2001February 6, 2003OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20030022438 Dynamic threshold-voltage field effect transistors and methods 20030022438MOTOROLA, INC.1303 E. Algonquin Road, Schaumburg, ILCallaway, Edgar H. JR.:; Cornett, Kenneth D.Boca Raton, FL:Coral Springs, FLJuly 24, 2001January 30, 2003OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20030022430 Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same 20030022430MOTOROLA, INC.1303 E. Algonquin Road, Schaumburg, IL, 60196-1079Emrick, Rudy M.:; Bosco, Bruce Allen:; Holmes, John E.:; Franson, Steven James:; Rockwell, Stephen KentGilbert, AZ:Phoenix, AZ:Scottsdale, AZ:Scottsdale, AZ:Mesa, AZJuly 24, 2001January 30, 2003OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20030022425 Structure and method for fabricating semiconductor structures and devices for optical filtering 20030022425MOTOROLA, INC.Schaumburg, ILTungare, AroonWinfield, ILJuly 25, 2001January 30, 2003OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20030022395 Structure and method for fabricating an integrated phased array circuit 20030022395Thoughtbeam, Inc.Austin, TXOlds, Keith A.Mesa, AZMay 2, 2002January 30, 2003OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20030020565 MEMS resonators and methods for manufacturing MEMS resonators 20030020565MOTOROLA, INC.Schamburg, ILCornett, Kenneth D.:; Heck, Joseph P.Coral Springs, FL:Fort Lauderdale, FLJuly 24, 2001January 30, 2003OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20030017722 Structure and method for fabricating an integrated phased array circuit 20030017722MOTOROLA, INCSchaumburg, ILEmrick, Rudy M.Gilbert, AZJuly 17, 2001January 23, 2003OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20030015767 Structure and method for fabricating semiconductor structures and devices with integrated control components 20030015767MOTOROLA, INC.Schaumburg, ILEmrick, Rudy M.:; Escalera, Nestor J.:; Farber, Bryan K.:; Rockwell, Stephen K.:; Holmes, John E.:; Bosco, Bruce A.:; Franson, Steven J.Gilbert, AZ:Gilbert, AZ:Chandler, AZ:Mesa, AZ:Scottsdale, AZ:Phoenix, AZ:Scottsdale, AZJuly 17, 2001January 23, 2003OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20020181826 Structure and method for fabricating a high-speed interface in semiconductor structures 20020181826MOTOROLA, INC.1303 E. Algonquin Road, Schaumburg, IL, 60196-1079Johnson, Timothy Joe:; Traylor, Kevin B.:; Rabe, Duane C.Mundelein, IL:Austin, TX:Hawthorne Woods, ILJune 1, 2001December 5, 2002OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20020179957 Structure and method for fabricating high Q varactor diodes 20020179957MOTOROLA, INC.Schaumburg, ILTraylor, Kevin B.:; Irwin, James S.Austin, TX:Paige, TXMay 29, 2001December 5, 2002OBLON SPIVAK MCCLELLAND MAIER & NEUSTADT PC; FOURTH FLOOR; 1755 JEFFERSON DAVIS HIGHWAY; ARLINGTON; VA; 22202; US;
20020130262 Method for inspecting substrate, substrate inspecting system and electron beam apparatus 20020130262N/AN/ANakasuji, Mamoru:; Noji, Nobuharu:; Satake, Tohru:; Kimba, Toshifumi:; Hatakeyama, Masahiro:; Watanabe, Kenji:; Sobukawa, Hirosi:; Karimata, Tsutomu:; Yoshikawa, Shoji:; Oowada, Shin:; Saito, Mutsumi:; Hamashima, MunekiKanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Tokyo, JP:Kanagawa, JP:Kanagawa, JP:Saitama, JPNovember 2, 2001September 19, 2002ARMSTRONG,WESTERMAN & HATTORI, LLP; 1725 K STREET, NW.; SUITE 1000; WASHINGTON; DC; 20006; US;
20020036264 Sheet beam-type inspection apparatus 20020036264N/AN/ANakasuji, Mamoru:; Noji, Nobuharu:; Satake, Tohru:; Kimba, Toshifumi:; Sobukawa, Hirosi:; Karimata, Tsutomu:; Oowada, Shin:; Yoshikawa, Shoji:; Saito, MutsumiKanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Tokyo, JP:Kanagawa, JPJune 27, 2001March 28, 2002ARMSTRONG,WESTERMAN & HATTORI, LLP; 1725 K STREET, NW.; SUITE 1000; WASHINGTON; DC; 20006; US;
20020033449 Inspection system by charged particle beam and method of manufacturing devices using the system 20020033449N/AN/ANakasuji, Mamoru:; Noji, Nobuharu:; Satake, Tohru:; Kimba, Toshifumi:; Sobukawa, Hirosi:; Yoshikawa, Shoji:; Karimata, Tsutomu:; Oowada, Shin:; Saito, Mutsumi:; Hamashima, Muneki:; Takagi, ToruKanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Tokyo, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Chiba, JP:Kanagawa, JPJune 27, 2001March 21, 2002ARMSTRONG,WESTERMAN & HATTORI, LLP; 1725 K STREET, NW.; SUITE 1000; WASHINGTON; DC; 20006; US;
20020013042 Defect reduction in GaN and related materials 20020013042N/AN/AMorkoc, HadisRichmond, VAApril 16, 2001January 31, 2002McGuire Woods LLP; Suite 1800; 1750 Tysons Boulevard; McLean; VA; 22102; US;
20010053568 Method for manufacturing a semiconductor component 20010053568N/AN/ADeboy, Gerald:; Friza, Wolfgang:; Haberlen, Oilver:; Rub, Michael:; Strack, HelmutMunchen, DE:Villach, AT:Villach, AT:Faak Am See, AT:Munchen, DEMarch 26, 2001December 20, 2001LERNER AND GREENBERG, P.A.; PATENT ATTORNEYS AND ATTORNEYS AT LAW; Post Office Box 2480; Hollywood; FL; 33022-2480; US;
20010032666 Integrated capacitor-like battery and associated method 20010032666Inegrated Power Solutions Inc.N/AJenson, Mark Lynn:; Klaassen, Jody Jon:; Yan, Jenn-FengPrinceton, MN:Minneapolis, MN:Maple Grove, MNMarch 23, 2001October 25, 2001Schwegman, Lundberg, Woessner & Kluth, P.A.; P.O. Box 2938; Minneapolis; MN; 55402; US;
20010013605 Light-emitting device using group III nitride group compound semiconductor 20010013605N/AN/AUmezaki, Tamiyo:; Tezen, Yuta:; Hiramatsu, Toshio:; Koike, MasayoshiAichi, JP:Aichi, JP:Aichi, JP:Aichi, JPNovember 30, 2000August 16, 2001PILLSBURY WINTHROP LLP; 1600 TYSONS BOULEVARD; MCLEAN; VA; 22102; US;