Search Type: US Publications

NOT aclm/(schottky and diode$) AND aclm/((sic or "silicon carbide") and wafer$) AND spec/(schottky and diode$)

Classification	Number	Url	PMD	Assignee	Assignee Loc	Inventor(s)	Inventor Loc(s)	Filing Date	Issued Date	App Contact Info
	20040266057	Silicon carbide and method of manufacturing the same	20040266057	HOYA CORPORATION	N/A	Nagasawa, Hiroyuki	Tokyo, JP	July 14, 2004	December 30, 2004	SUGHRUE, MION, ZINN, MACPEAK & SEAS, PLLC; 2100 Pennsylvania Avenue, N.W.; Washington; DC; 20037-3213; US;
	20040206976	Manufacturing methods for large area silicon carbide devices	20040206976	N/A	N/A	Agarwal, Anant:; Ryu, Sei-Hyung:; Palmour, John W.	Chapel Hill, NC:Cary, NC:Raleigh, NC	May 14, 2004	October 21, 2004	MYERS BIGEL SIBLEY & SAJOVEC; PO BOX 37428; RALEIGH; NC; 27627; US;
	20040187766	Method of fabricating monocrystalline crystals	20040187766	N/A	N/A	Letertre, Fabrice	Grenoble, FR	November 20, 2003	September 30, 2004	WINSTON & STRAWN; PATENT DEPARTMENT; 1400 L STREET, N.W.; WASHINGTON; DC; 20005-3502; US;
	20030070611	SiC single crystal, method for manufacturing SiC single crystal, SiC water having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device	20030070611	N/A	N/A	Nakamura, Daisuke:; Ito, Tadashi:; Kondo, Hiroyuki:; Naito, Masami	Nagoya-city, JP:Nishikamo-gun, JP:Kariya-city, JP:Inazawa-city, JP	October 10, 2002	April 17, 2003	LAW OFFICES OF DAVID G. POSZ; 2000 L STREET, N.W.; SUITE 200; WASHINGTON; DC; 20036; US;
	20030047748	Large area silicon carbide devices	20030047748	N/A	N/A	Agarwal, Anant:; Ryu, Sei-Hyung:; Palmour, John W.	Chapel Hill, NC:Cary, NC:Raleigh, NC	September 12, 2001	March 13, 2003	MYERS BIGEL SIBLEY & SAJOVEC; PO BOX 37428; RALEIGH; NC; 27627; US;
	20020096106	Electronic device with composite substrate	20020096106	N/A	N/A	Kub, Francis J.:; Hobart, Karl D.	Arnold, MD:Upper Marlboro, MD	January 19, 2001	July 25, 2002	NAVAL RESEARCH LABORATORY; ASSOCIATE COUNSEL (PATENTS); CODE 1008.2; 4555 OVERLOOK AVENUE, S.W.; WASHINGTON; DC; 20375-5320; US;
	20020086534	M'''N based materials and methods and apparatus for producing same	20020086534	N/A	N/A	Cuomo, Jerome J.:; Williams, N. Mark:; Hanser, Andrew David:; Carlson, Eric Porter:; Thomas, Darin Taze	Cary, NC:Raleigh, NC:Raleigh, NC:Raleigh, NC:Raleigh, NC	November 30, 2001	July 4, 2002	JENKINS & WILSON, PA; 3100 TOWER BLVD; SUITE 1400; DURHAM; NC; 27707; US;
	20020078881	Method and apparatus for producing M'''N columns and M'''N materials grown thereon	20020078881	N/A	N/A	Cuomo, Jerome J.:; Williams, N. Mark:; Hanser, Andrew David:; Carlson, Eric Porter:; Thomas, Darin Taze	Cary, NC:Raleigh, NC:Raleigh, NC:Raleigh, NC:Raleigh, NC	November 30, 2001	June 27, 2002	JENKINS & WILSON, PA; 3100 TOWER BLVD; SUITE 1400; DURHAM; NC; 27707; US;
	20020019117	Silicon carbide and method of manufacturing the same	20020019117	HOYA CORPORATION	N/A	Nagasawa, Hiroyuki	Tokyo, JP	August 9, 2001	February 14, 2002	SUGHRUE, MION, ZINN, MACPEAK & SEAS, PLLC; 2100 Pennsylvania Avenue, N.W.; Washington; DC; 20037-3213; US;
	20020017647	Junction termination for SiC schottky diode	20020017647	N/A	N/A	Bakowski, Mietek:; Gustafsson, Ulf:; Harris, Christopher I.	Skultuna, SE:Linkoping, SE:Sollentuna, SE	July 27, 2001	February 14, 2002	Connolly Bove Lodge & Hutz LLP; Suite 800; 1990 M Street, N.W.; Washington; DC; 20036-3425; US;