Search Type: US Issued Patents

aclm/semiconduct$ AND aclm/("carrier lifetime" or casting) AND aclm/electric$ NOT aclm/frequency AND spec/frequency

Classification	Number	Url	PMD	Priority	Assignee	Assignee Loc	Inventor(s)	Inventor Loc(s)	Filing Date	Issued Date
	6,774,476	Power converter and method for producing the same	6,774,476	No	Robert Bosch GmbH	Stuttgart, DE	Spitz; Richard:Goerlach; Alfred:Wallrauch; Alexander:Ruf; Christoph:Urbach; Peter:Knappenberger; Uwe	Reutlingen, DE:Kusterdingen, DE:Gomaringen, DE:Eningen, DE:Reutlingen, DE:Muehlacker, DE	December 4, 2002	August 10, 2004
	6,759,307	Method to prevent die attach adhesive contamination in stacked chips	6,759,307	No	Micron Technology, Inc.	Boise, ID	Yang; Jicheng	Newark, DE	November 1, 2000	July 6, 2004
	6,759,010	Use of an array of polymeric sensors of varying thickness for detecting analytes in fluids	6,759,010	Yes CROSS REFERENCE TO RELATED APPLICATIONS This application is a divisional of U.S. application Ser. No. 09/442,074, filed Nov. 16, 1999, which claims the benefit under 35 U.S.C. 119(e) of the U.S. Provisional Application No. 60/108,915, filed on Nov. 17, 1998 and U.S. Provisional Application No. 60/108,674, filed on Nov. 16, 1998.	California Institute of Technology	Pasadena, CA	Lewis; Nathan S.:Severin; Erik J.:Freund; Michael:Matzger; Adam J.	La Canada, CA:Pasadena, CA:Altadena, CA:Pasadena, CA	July 20, 2001	July 6, 2004
	6,732,590	Pressure sensor and process for producing the pressure sensor	6,732,590	No	Infineon Technologies AG	Munich, DE	Gottlieb; Alfred:Schroder; Martin	Nittendorf, DE:Donaustauf, DE	November 20, 2002	May 11, 2004
	6,674,159	Bi-level microelectronic device package with an integral window	6,674,159	Yes CROSS-REFERENCE TO RELATED APPLICATIONS This application is a Continuation-in-Part application of allowed U.S. patent application "Microelectronic Device Package with an Integral Window, Peterson and Watson, Ser. No. 09/571,335 filed May 16, 2000 , which is incorporated herein by reference. This application is related to allowed U.S. patent application Ser. No 09/572,720 to Peterson and Conley, "Pre-Release Plastic Packaging of MEMS and IMEMS Devices", which is incorporated herein by reference. This application is also related to co-pending application, Ser. No. 10/093,454 "Single Level Microelectronic Device Package with an Integral Window", to Peterson and Watson, which is incorporated herein by reference.	Sandia National Laboratories	Albuquerque, NM	Peterson; Kenneth A.:Watson; Robert D.	Albuquerque, NM:Tijeras, NM	February 25, 2002	January 6, 2004
	6,654,153	Semiconductor saturable absorber-based optical domain optical signal sampling device for sampling an optical signal	6,654,153	No	Agilent Technologies, Inc.	Palo Alto, CA	Kaneko; Yasuhisa	Kawasaki, JP	November 30, 2001	November 25, 2003
	6,607,932	High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region	6,607,932	Yes This is a division, of application Ser. No. 09/666,231, filed Sep. 21, 2000 now U.S. Pat. No. 6,448,582.	Yale University	New Haven, CT	Woodall; Jerry M.:Koudelka; Robert D.	Woodbridge, CT:New Haven, CT	August 28, 2002	August 19, 2003
	6,605,830	Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein	6,605,830	Yes This is a divisional application of Ser. No. 09/334,598, filed Jun. 17, 1999, now U.S. Pat. No. 6,323,509.	Mitsubishi Denki Kaisha	Tokyo, JP	Kusunoki; Shigeru	Tokyo, JP	September 20, 2001	August 12, 2003
	6,538,312	Multilayered microelectronic device package with an integral window	6,538,312	Yes CROSS-REFERENCE TO RELATED APPLICATIONS This application is a divisional of Ser. No. 09/571,335 filed May 16, 2000 now U.S. Pat. No. 6,384,473. This application is related to a co-pending application "Method of Fabricating a Microelectronic Device Package with an Integral Window", by Kenneth A. Peterson and Robert D. Watson.	Sandia Corporation	Albuquerque, NM	Peterson; Kenneth A.:Watson; Robert D.	Albuquerque, NM:Tijeras, NM	February 1, 2002	March 25, 2003
	6,495,895	Bi-level multilayered microelectronic device package with an integral window	6,495,895	Yes CROSS-REFERENCE TO RELATED APPLICATIONS This application is a divisional application of allowed U.S. patent application "Microelectronic Device Package with an Integral Window, Peterson et al., Ser. No. 09/571,335, filed May 16, 2000, now U.S. Pat. No. 6,384,473, which is incorporated herein by reference.	Sandia Corporation	Albuquerque, NM	Peterson; Kenneth A.:Watson; Robert D.	Albuquerque, NM:Tijeras, NM	February 1, 2002	December 17, 2002
	6,489,670	Sealed symmetric multilayered microelectronic device package with integral windows	6,489,670	Yes CROSS-REFERENCE TO RELATED APPLICATIONS This application is a divisional application of allowed U.S. patent application "Microelectronic Device Package with an Integral Window, Peterson et al., Ser. No. 09/571,335, filed May 16, 2000 now U.S. Pat. No. 6,384,473 which is incorporated Herein by reference.	Sandia Corporation	Albuquerque, NM	Peterson; Kenneth A.:Watson; Robert D.	Albuquerque, NM:Tijeras, NM	February 1, 2002	December 3, 2002
	6,423,571	Method of making a semiconductor device having a stress relieving mechanism	6,423,571	Yes This application is a Divisional application of application Ser. No. 09/482,891, filed Jan. 14, 2000, which is a Divisional application of application Ser. No. 08/809,233, filed Mar. 19, 1997 now U.S. Pat. No. 6,028,364, which is an application filed under 35 USC 371 of International application Ser. No. PCT/JP95/00714, filed Apr. 12, 1995.	Hitachi, Ltd.	Tokyo, JP	Ogino; Masahiko:Nagai; Akira:Eguchi; Shuji:Ishii; Toshiaki:Segawa; Masanori:Akahoshi; Haruo:Takahashi; Akio:Miwa; Takao:Tanaka; Naotaka:Anjou; Ichirou	Hitachi, JP:Hitachi, JP:Tokai-mura, JP:Hitachi, JP:Hitachi, JP:Hitachi, JP:Hitachiohta, JP:Hitachinaka, JP:Chiyoda-machi, JP:Koganei, JP	June 20, 2001	July 23, 2002
	6,323,509	Power semiconductor device including a free wheeling diode and method of manufacturing for same	6,323,509	No	Mitsubishi Denki Kabushiki Kaisha	Tokyo, JP	Kusunoki; Shigeru	Tokyo, JP	June 17, 1999	November 27, 2001
	6,294,401	Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same	6,294,401	Yes PRIOR APPLICATION This application stems from U.S. Ser. No. 60/097,037, filed on Aug. 19, 1998.	Massachusetts Institute of Technology	Cambridge, MA	Jacobson; Joseph M.:Hubert; Brian N.:Ridley; Brent:Nivi; Babak:Fuller; Sawyer	Newton, MA:Cambridge, MA:Cambridge, MA:Boston, MA:Los Osos, CA	June 17, 1999	September 25, 2001
	6,211,961	Optical method for the characterization of the electrical properties of semiconductors and insulating films	6,211,961	Yes CROSS-REFERENCE TO A RELATED PATENT APPLICATION This is a division of application Ser. No. 08/924,792, filed Sep. 5, 1997, now U.S. Pat. No. 6,008,906, which is a continuation-in-part of application Ser. No. 08/519,666, now U.S. Pat. No. 5,706,094 filed Aug. 25, 1995.	Brown University Research Foundation	Providence, RI	Maris; Humphrey J	Barrington, RI	August 30, 1999	April 3, 2001
	6,008,906	Optical method for the characterization of the electrical properties of semiconductors and insulating films	6,008,906	Yes CROSS-REFERENCE TO A RELATED PATENT APPLICATION This patent application is a continuation-in-part of U.S. patent application Ser. No. 08/519,666, filed Aug. 25, 1995 now Pat. No. 5,706,094, entitled "Ultrafast Optical Technique for the Characterization of Altered Materials", by Humphrey J. Maris, the disclosure of which is incorporated by reference herein in its entirety.	Brown University Research Foundation	Providence, RI	Maris; Humphrey J.	Barrington, RI	September 5, 1997	December 28, 1999
	5,773,858	Power diode	5,773,858	No	Eupec Europaeische Gesellschaft fuer Leistungshalbleiter mbH & Co. KG.	Warstein-Belecke, DE	Schlangenotto; Heinrich:Sommer; Karl-Heinz:Kaussen; Franz	Neu-Isenburg, DE:Warstein, DE:Warstein, DE	January 19, 1993	June 30, 1998
	5,528,058	IGBT device with platinum lifetime control and reduced gaw	5,528,058	Yes This is a continuation of U.S. application Ser. No. 08/107,293, filed Aug. 13, 1993, now abandoned, which is a continuation-in-part of co-pending U.S. Ser. No. 07/852,932, filed Mar. 13, 1992, now U.S. Pat. No. 5,262,336, which is a file wrapper continuation of U.S. application Ser. No. 07/751,441, filed Aug. 28, 1991, now abandoned, which is a continuation-in-part of U.S. application Ser. No. 07/737,560, filed Jul. 26, 1991, now U.S. Pat. No. 5,182,234, which is a file wrapper continuation of U.S. application Ser. No. 07/467,636, filed Jan. 19, 1990, now abandoned, and U.S. application Ser. No. 07/439,101, filed Nov. 16, 1989, now U.S. Pat. No. 5,045,903, issued Sep. 3, 1991, which are divisions of U.S. application Ser. No. 07/194,874, filed May 17, 1988, now U.S. Pat. No. 4,895,810, issued Jan. 23, 1990, as a continuation-in-part of commonly-assigned U.S. patent application of T. G. Hollinger, U.S. application Ser. No. 06/842,771, filed Mar. 21, 1986, entitled MASK SURROGATE SEMICONDUCTOR PROCESS EMPLOYING DOPANT-OPAQUE REGION, now U.S. Pat. No. 4,748,103, issued May 31, 1988.	Advanced Power Technology, Inc.	Bend, OR	Pike, Jr.; Douglas A.:Tsang; Dah W.:Katana; James M.:Sdrulla; Dumitru	Bend, OR:Bend, OR:Bend, OR:Bend, OR	October 13, 1994	June 18, 1996
	5,454,879	Helically grown monolithic high voltage photovoltaic devices and method therefor	5,454,879	No	n/a	n/a	Bolger; Stephen R.	127 W. 79th St., Apt. 11 J, New York, NY 10024	March 17, 1994	October 3, 1995
	5,399,413	High performance composite and conductive ground plane for electrostatic recording of information	5,399,413	No	Rexham Graphics Inc.	South Hadley, MA	Katsen; Boris J.:Taylor; Dene H.:Himmelwright; Richard S.:Klausner; Cynthia F.:Sporbert; Edward W.:Stewart; Barbara J.:Cavanaugh; John:Turi; Eran	Longmeadow, MA:Holyoke, MA:Wilbraham, MA:Hadley, MA:Chicapee, MA:Springfield, MA:Easthampton, MA:Springfield, MA	April 30, 1993	March 21, 1995
	5,357,357	Liquid crystal display devices with organic thin film formed by compressing molecules on liquid surface and transferring to substrate by horizontal lifting	5,357,357	No	Hitachi, Ltd.	Tokyo, JP	Imazeki; Shuji:Tomioka; Yasushi:Tanaka; Naoki:Taniguchi; Yoshio:Kawakami; Hideaki:Kondo; Katsumi:Yamasaki; Masami	Saitama, JP:Saitama, JP:Saitama, JP:Hino, JP:Chiba, JP:Katsuta, JP:Saitama, JP	September 19, 1990	October 18, 1994
	5,347,526	Wavelength-tunable semiconductor laser	5,347,526	No	Kabushiki Kaisha Toshiba	Kawasaki, JP	Suzuki; Nobuo:Tohyama; Masaki:Onomura; Masaaki	Tokyo, JP:Tokyo, JP:Tokyo, JP	March 31, 1993	September 13, 1994
	5,287,421	All-optical modulation in crystalline organic semiconductor waveguides	5,287,421	No	University of Southern California	Los Angeles, CA	Forrest; Stephen R.:Zang; De Yu	Princeton, NJ:Irvine, CA	January 11, 1993	February 15, 1994
	5,118,945	Photothermal test process, apparatus for performing the process and heat microscope	5,118,945	No	Siemens Aktiengesellschaft	Munich, DE	Winschuh; Erich:Petry; Harald	Neu-Insenburg, DE:Fechingen, DE	April 24, 1990	June 2, 1992
	5,075,751	Semiconductor device	5,075,751	Yes This application is a continuation of application Ser. No. 07/284,399, filed Dec. 14, 1988, now abandoned.	Matsushita Electric Works, Ltd.	Osaka, JP	Tomii; Kazushi:Abe; Toshiroh:Komoda; Takuya	Kadoma, JP:Kadoma, JP:Kadoma, JP	September 17, 1990	December 24, 1991
	5,030,853	High speed logic and memory family using ring segment buffer	5,030,853	No	Thunderbird Technologies, Inc.	Research Triangle Park, NC	Vinal; Albert W.	Cary, NC	March 21, 1990	July 9, 1991
	4,628,203	Non-delineated detector having a differential readout	4,628,203	No	Honeywell, Inc.	Minneapolis, MN	Reine; Marion B.:Kusner; Ronald R.	Wellesley, MA:Concord, MA	January 14, 1985	December 9, 1986
	4,485,389	Amorphous semiconductors equivalent to crystalline semiconductors	4,485,389	Yes RELATED APPLICATIONS This application a continuation of U.S. application Ser. No. 193,072 filed Oct. 2, 1980 and abandoned which application in turn is a continuation-in-part of U.S. application Ser. No. 104,285, filed Dec. 17, 1979, and now abandoned which application, in turn, is a division of application Ser. No. 884,664, filed Mar. 8, 1978, now U.S. Pat. No. 4,217,374.	Energy Conversion Devices, Inc.	Troy, MI	Ovshinsky; Stanford R.:Izu; Masatsugu	Bloomfield Hills, MI:Birmingham, MI	September 29, 1982	November 27, 1984
	4,259,683	High switching speed P-N junction devices with recombination means centrally located in high resistivity layer	4,259,683	Yes This is a continuation-in-part of application Ser. No. 766,614, filed Feb. 7, 1977 now abandoned.	General Electric Company	Schenectady, NY	Adler; Michael S.:Temple; Victor A. K.	Schenectady, NY:Clifton Park, NY	August 21, 1978	March 31, 1981
	4,217,374	Amorphous semiconductors equivalent to crystalline semiconductors	4,217,374	No	Energy Conversion Devices, Inc.	Troy, MI	Ovshinsky; Stanford R.:Izu; Masatsugu	Bloomfield Hills, MI:Birmingham, MI	March 8, 1978	August 12, 1980
	4,064,521	Semiconductor device having a body of amorphous silicon	4,064,521	Yes BACKGROUND OF THE INVENTION This is a continuation-in-part of application Ser. No. 659,268, filed Feb. 19, 1976, which is itself a continuation-in-part of application Ser. No. 599,588, filed July 28, 1975, now abandoned.	RCA Corporation	New York, NY	Carlson; David Emil	Yardley, PA	July 30, 1976	December 20, 1977