Search Type: US Issued Patents

aclm/film$ AND aclm/plasma AND aclm/"transition metal"

Classification	Number	Url	PMD	Priority	Assignee	Assignee Loc	Inventor(s)	Inventor Loc(s)	Filing Date	Issued Date
classification-0	6,156,395	Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby	6,156,395	Yes CROSS-REFERENCE TO OTHER APPLICATIONS This application is a Continuation of U.S. patent application Ser. No. 08/948,832, filed Oct. 10, 1997, now abandoned, and entitled "Plasma Enhanced Chemical Vapor Deposition (PECVD) Method of Forming Vanadium Oxide Films and Vanadium Oxide Thin-Films Prepared Thereby.	Midwest Research Institute	Kansas City, MO	Zhang; Ji-Guang:Tracy; C. Edwin:Benson; David K.:Turner; John A.:Liu; Ping	Golden, CO:Golden, CO:Golden, CO:Littleton, CO:Lakewood, CO	June 3, 1999	December 5, 2000
classification-0	4,687,560	Method of synthesizing a plurality of reactants and producing thin films of electro-optically active transition metal oxides	4,687,560	No	The United States of America as represented by the United States	Washington, DC	Tracy; C. Edwin:Benson; David K.:Ruth; Marta R.	Golden, CO:Golden, CO:Golden, CO	August 16, 1985	August 18, 1987