Search Type: US Issued Patents

NOT aclm/film$ AND aclm/plasma AND aclm/"transition metal" AND spec/film$

Classification	Number	Url	PMD	Priority	Assignee	Assignee Loc	Inventor(s)	Inventor Loc(s)	Filing Date	Issued Date
	6,784,779	Inductor employing carbon nanotube and/or carbon nanofiber	6,784,779	No	LG Electronics, Inc.	Seoul, KR	Shin; Jin Koog:Kim; Gyu Tae:Kim; Hak Su	Seoul, KR:Seoul, KR:Suwon, KR	June 26, 2001	August 31, 2004
	6,743,681	Methods of Fabricating Gate and Storage Dielectric Stacks having Silicon-Rich-Nitride	6,743,681	No	Micron Technology, Inc.	Boise, ID	Bhattacharyya; Arup	Essex Junction, VT	November 9, 2001	June 1, 2004
	6,743,524	Barrier layer for an article and method of making said barrier layer by expanding thermal plasma	6,743,524	No	General Electric Company	Niskayuna, NY	Schaepkens; Marc	Ballston Lake, NY	May 23, 2002	June 1, 2004
	6,712,950	Electrochemical synthesis of ammonia	6,712,950	No	Lynntech, Inc.	College Station, TX	Denvir; Adrian:Murphy; Oliver J.:Cisar; Alan:Robertson; Priscilla:Uselton; Kyle	College Station, TX:Bryan, TX:Cypress, TX:Bryan, TX:College Station, TX	March 4, 2002	March 30, 2004
	6,682,602	Chemical vapor deposition systems including metal complexes with chelating O- and/or N-donor ligands	6,682,602	Yes This is a division of application Ser. No. 09/649,556, filed Aug. 28, 2000, now U.S. Pat. No. 6,455,717, which is a division of Ser. No. 09/144,745, filed Sep. 1, 1998, (now U.S. Pat. No. 6,225,237), which are all incorporated herein by reference.	Micron Technology, Inc.	Boise, ID	Vaartstra; Brian A.	Nampa, ID	August 19, 2002	January 27, 2004
	6,677,037	Laser shock peening tape, method and article	6,677,037	No	General Electric Company	Niskayuna, NY	Miller; Mark Lloyd:Azad; Farzin Homayoun:Mannava; Seetha Ramaiah:Wright, III; Philemon Kennard	Schenectady, NY:Clifton Park, NY:Cincinnati, OH:Cincinnati, OH	September 13, 2000	January 13, 2004
	6,649,449	Methods of forming physical vapor deposition target/backing plate assemblies	6,649,449	Yes RELATED PATENT DATA This patent is a divisional application of U.S. patent application Ser. No. 09/699,899 which was filed on Oct. 27, 2000 now U.S. Pat. No. 6,376,281.	Honeywell International Inc.	Morristown, NJ	Kohler; Ron D.:Cooper; Matthew S.	New Brighton, PA:Portersville, PA	January 3, 2002	November 18, 2003
	6,602,774	Selective salicidation process for electronic devices integrated in a semiconductor substrate	6,602,774	No	STMicroelectronics S.r.l.	Agrate Brianza, IT	Fontana; Gabriella:Pividori; Luca	Vimercate, IT:Curno, IT	December 28, 1999	August 5, 2003
	6,524,662	Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof	6,524,662	No	Jang; Jin:LG. Philips LDC Co., LTD	Seoul, KR:Seoul, KR	Jang; Jin:Yoon; Soo-Young:Oh; Jae-Young:Shon; Woo-Sung:Park; Seong-Jin	102-1103, Hyundae Apt. 53, Jamwon-dong, Seocho-ku, Seoul, KR:Daejeon, KR:Jeju-shi, KR:Seoul, KR:Seoul, KR	July 9, 1999	February 25, 2003
	6,524,544	Self-regenerative process for contaminant removal from ammonia	6,524,544	No	Aeronex, Inc.	San Diego, CA	Alvarez, Jr.; Daniel:Spiegelman; Jeffrey J.	San Diego, CA:San Diego, CA	October 27, 2000	February 25, 2003
	6,515,787	Electrochromic layer	6,515,787	Yes CROSS-REFERENCE TO RELATED APPLICATIONS This application claims benefit of United States Patent Provisional application Ser. No. 60/187,704 filed Mar. 7, 2000. All subject matter set forth in provisional application serial No. 60/187,704 is hereby incorporated by reference into the present application as if fully set forth herein.	Eclipse Energy Systems, Inc.	St. Petersburg, FL	Westfall; Raymond T.:Kislov; Nikolai	Seminole, FL:Tampa, FL	March 7, 2001	February 4, 2003
	6,482,477	Method for pretreating dielectric layers to enhance the adhesion of CVD metal layers thereto	6,482,477	No	Tokyo Electron Limited	Tokyo, JP	Westhoff; Richard C.:Caliendo; Steven P.:Hillman; Joseph T.	Hudson, NH:Gold Canyon, AZ:Scottsdale, AZ	November 28, 2000	November 19, 2002
	6,472,062	Method for making a non-sticking diamond-like nanocomposite	6,472,062	No	N.V. Bekaert S.A.	Zwevegem, BE	Neerinck; Dominique:Persoone; Peter:Sercu; Marc	Hertsberge, BE:Deinze, BE:Roeselare, BE	December 20, 1999	October 29, 2002
	6,465,334	Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors	6,465,334	Yes CROSS-REFERENCE TO RELATED APPLICATION This application contains subject matter similar to subject matter disclosed in co-pending U.S. patent application Ser. Nos. 09/679,881, filed on Oct. 5, 2000, and 09/679,872, filed on Oct. 5, 2000, now U.S. Patent No. 6,300,203, issued Oct. 9, 2001.	Advanced Micro Devices, Inc.	Sunnyvale, CA	Buynoski; Matthew S.:Besser; Paul R.:King; Paul L.:Paton; Eric N.:Xiang; Qi	Palo Alto, CA:Austin, TX:Mountain, CA:Morgan Hill, CA:San Jose, CA	October 5, 2000	October 15, 2002
	6,440,640	Thin resist with transition metal hard mask for via etch application	6,440,640	Yes CROSS REFERENCE TO RELATED APPLICATION The present application is a continuation application of U.S. patent application Ser. No. 09/203,450, filed Dec. 1, 1998, now U.S. Pat. No. 6,162,587 and entitled Thin Resist with Transition Metal Hard Mask for Via Etch Application.	Advanced Micro Devices, Inc.	Sunnyvale, CA	Yang; Chih Yuh:Lyons; Christopher F.:Levinson; Harry J.:Nguyen; Khanh B.:Wang; Fei:Bell; Scott A.	San Jose, CA:Fremont, CA:Saratoga, CA:San Mateo, CA:San Jose, CA:San Jose, CA	October 31, 2000	August 27, 2002
	6,375,761	Magnetoresistive material with two metallic magnetic phases	6,375,761	No	The Research Foundation of State University of New York	Stony Brook, NY	Gambino; Richard J.:Kim; Taewan	Stony Brook, NY:Kyunggi-Do, KR	April 30, 2001	April 23, 2002
	6,329,101	Method for manufacturing a powdery material electrode member for a secondary cell	6,329,101	Yes This is a divisional of Ser. No. 08/999,136 filed Dec. 29, 1997, now U.S. Pat. No. 6,040,087.	Canon Kabushiki Kaisha	Tokyo, JP	Kawakami; Soichiro	Nara, JP	November 23, 1999	December 11, 2001
	6,261,687	Oxygen plasma resistant polymer for electrical devices	6,261,687	Yes This application is a divisional application of U.S. Ser. No. 09/023,171, filed Feb. 13, 1998, now U.S. Pat. No. 6,159,600, which is a continuation-in-part application of U.S. Ser. No. 08/801,832, filed Feb. 14, 1997, now U.S. Pat. No. 5,780,525.	Reliance Electric Technologies, LLC	Thousand Oaks, CA	Ryang; Hong-Son:Chung; Young Jin:Snyder, II; Joseph T.:Sung; An-Min Jason	Camarillo, CA:Calabasas, CA:Chesterland, OH:Morris Plains, NJ	August 25, 2000	July 17, 2001
	6,258,741	Corrosion-resistant member	6,258,741	No	Kyocera Corporation	Kyoto, JP	Kohsaka; Shoji:Itoh; Yumiko:Matsunosako; Hitoshi:Matsumoto; Hidemi:Nakanishi; Masahito	Kokubu, JP:Kokubu, JP:Kokubu, JP:Kokubu, JP:Kokubu, JP	November 30, 1998	July 10, 2001
	6,228,471	Coating comprising layers of diamond like carbon and diamond like nanocomposite compositions	6,228,471	No	N.V. Bekaert S.A.	Zwevegem, BE	Neerinck; Dominique:Persoone; Peter	Hertsberge, BE:Deinze, BE	July 27, 1999	May 8, 2001
	6,224,979	Oxygen plasma resistant polymer for electrical devices	6,224,979	Yes This application is a divisional application of U.S. Ser. No. 09/023,171, filed Feb. 13, 1998, now U.S. Pat. No. 6,159,600, which is a continuation-in-part application of U.S. Ser. No. 08/801,832, filed Feb. 14, 1997, now U.S. Pat. No. 5,780,525. The invention relates to an oxygen plasma resistant polymer which may be used as an electrically insulating coating or as an electrical component. More specifically, the invention relates to an oxygen plasma resistant polymer made with a metal oxide sol which may be used to coat electromagnetic coils such as stator coils of an electric motor.	Reliance Electric Technologies, LLC	Thousand Oaks, CA	Ryang; Hong-Son:Chung; Young Jin:Snyder, II; Joseph T.:Sung; An-Min Jason	Camarillo, CA:Calabasas, CA:Chesterland, OH:Morris Plains, NJ	September 18, 2000	May 1, 2001
	6,200,675	Diamond-like nanocomposite compositions	6,200,675	No	N.V. Bekaert S.A.	Zwevegem, BE	Neerinck; Dominique:Goel; Arvind	Hertsberge, BE:Buffalo, NY	March 15, 1999	March 13, 2001
	6,159,600	Oxygen plasma resistant polymer for electrical devices	6,159,600	Yes RELATED U.S. APPLICATION DATA This application is a continuation-in-part application of U.S. Ser. No. 08/801,832 filed Feb. 14, 1997, now U.S. Pat. No. 5,780,525.	Reliance Electric Technologies, LLC	Thousand Oaks, CA	Ryang; Hong-Son:Chung; Young Jin:Snyder, II; Joseph T.:Sung; An-Min Jason	Camarillo, CA:Calabasas, CA:Chesterland, OH:Morris Plains, NJ	February 13, 1998	December 12, 2000
	6,087,270	Method of patterning substrates	6,087,270	No	Micron Technology, Inc.	Boise, ID	Reinberg; Alan R.:Donohoe; Kevin G.:Vaartstra; Brian A.	Boise, ID:Boise, ID:Nampa, ID	June 18, 1998	July 11, 2000
	6,079,357	Plasma processing apparatus	6,079,357	No	Tokyo Electron Yamanashi Limited:Japan Science and Technology Corporation	Nirasaki, JP:Kawaguchi, JP	Hama; Kiichi	Chino, JP	October 15, 1998	June 27, 2000
	6,069,035	Techniques for etching a transition metal-containing layer	6,069,035	No	Lam Researh Corporation	Fremont, CA	O'Donnell; Robert John:Goldspring; Gregory James	San Francisco, CA:Alameda, CA	December 19, 1997	May 30, 2000
	6,051,283	Microwave annealing	6,051,283	No	International Business Machines Corp.	Armonk, NY	Lee; Kam Leung:Lewis; David Andrew:Roy; Ronnen Andrew:Viswanathan; Raman Gobichettipalayam	Putnam Valley, NY:Carmel, NY:Ossining, NY:Briarcliff Manor, NY	January 13, 1998	April 18, 2000
	6,040,087	Powdery material, electrode member, and method for manufacturing same for a secondary cell	6,040,087	No	Canon Kabushiki Kaisha	Tokyo, JP	Kawakami; Soichiro	Nara, JP	December 29, 1997	March 21, 2000
	6,024,935	Lower-energy hydrogen methods and structures	6,024,935	Yes This application is a continuation of U.S. patent application Ser. No. 08/592,712, filed Jan. 26, 1996, abandoned.	Blacklight Power, Inc.	Cranbury, NJ	Mills; Randell L.:Good; William R.:Phillips; Jonathan:Popov; Arthur I.	Malvern, PA:Wayne, PA:State College, PA:Philadelphia, PA	March 21, 1997	February 15, 2000
	6,002,174	Barrier materials for semiconductor devices	6,002,174	No	Micron Technology, Inc.	Boise, ID	Akram; Salman:Meikle; Scott	Boise, ID:Boise, ID	December 31, 1997	December 14, 1999
	5,961,791	Process for fabricating a semiconductor device	5,961,791	No	Motorola, Inc.	Schaumburg, IL	Frisa; Larry E.:Chuang; Hak-Lay:Pressley; Laura	Cedar Park, TX:Austin, TX:Austin, TX	February 26, 1997	October 5, 1999
	5,953,605	Fabrication process of semiconductor device	5,953,605	No	NEC Corporation	Tokyo, JP	Kodama; Noriyuki	Tokyo, JP	February 28, 1997	September 14, 1999
	5,843,843	Method for forming a wiring layer a semiconductor device	5,843,843	Yes This is a continuation of application Ser. No. 08/115,733, filed on Sep. 2, 1993, which was abandoned upon the filing hereof.	Samsung Electronics Co., Ltd.	Suwon, KR	Lee; Sang-in:Choi; Gil-heyun	Suwon, KR:Anyang, KR	November 5, 1996	December 1, 1998
	5,830,540	Method and apparatus for reactive plasma surfacing	5,830,540	Yes This is a continuation of application Ser. No. 08/306,809, filed on Sep. 15, 1994, now abandoned.	Eltron Research, Inc.	Boulder, CO	Bowers; Jim	Lakewood, CO	July 25, 1996	November 3, 1998
	5,750,207	System and method for depositing coating of modulated composition	5,750,207	No	SI Diamond Technology, Inc.	Austin, TX	Hammond; Mark S.:McClain; Timothy W.	Houston, TX:Houston, TX	February 17, 1995	May 12, 1998
	5,741,721	Method of forming capacitors and interconnect lines	5,741,721	Yes REFERENCE TO RELATED APPLICATION This is a division of application Ser. No. 08/189,921 filed Feb. 1, 1994, now issued as U.S. Pat. No. 5,508,881.	Quality Microcircuits Corporation	Colorado Springs, CO	Stevens; E. Henry	Colorado Springs, CO	April 12, 1996	April 21, 1998
	5,731,079	Diamond cutting tools	5,731,079	Yes This is a division of application Ser. No. 08/438,772 filed May 11, 1995, now U.S. Pat. No. 5,681,653.	SI Diamond Technology, Inc.	Austin, TX	Hammond; Mark S.:Evans; Joseph D.	Houston, TX:Lafayette, CO	January 31, 1996	March 24, 1998
	5,610,099	Process for fabricating transistors using composite nitride structure	5,610,099	No	Ramtron International Corporation	Colorado Springs, CO	Stevens; E. Henry:Bailey; Richard A.:Taylor; Thomas C.	Colorado Springs, CO:Colorado Springs, CO:Colorado Springs, CO	June 28, 1994	March 11, 1997
	5,599,590	Texture treatment for carbon substrate and for carbon overcoat layer of magnetic disks	5,599,590	Yes RELATIONSHIP TO COPENDING APPLICATION This application is a continuation-in-part of application Ser. No. 08/139,592 filed Oct. 20, 1993, which is a continuation-in-part of application Ser. No. 08/092,833 filed Jul. 16, 1993 both now abandoned. These applications are incorporated herein by reference in their entirety.	Kobe Steel USA Inc.	Palo Alto, CA	Hayashi; Hidetaka:Kuwabara; Masago:Muramatsu; Kazuo:Kuchibhatla; Dilip	Saratoga, CA:Fremont, CA:Hyogo, JP:San Jose, CA	June 6, 1994	February 4, 1997
	5,588,975	Coated grinding tool	5,588,975	No	SI Diamond Technology, Inc.	Austin, TX	Hammond; Mark S.:Evans; Joseph D.	Houston, TX:Lafayette, CO	May 25, 1995	December 31, 1996
	5,545,487	Wear-resistant sintered aluminum alloy and method for producing the same	5,545,487	No	Hitachi Powdered Metals Co., Ltd.:Honda Giken Kogyo Kabushiki Kaisha	Chiba, JP:Tokyo, JP	Ishijima; Zenzo:Ichikawa; Jun-ichi:Sasaki; Shuji:Shikata; Hideo:Urata; Hideo:Kawase; Shoji:Ueda; Jun-ichi	Matsudo, JP:Matsudo, JP:Matsudo, JP:Matsudo, JP:Wako, JP:Wako, JP:Wako, JP	February 9, 1995	August 13, 1996
	5,431,856	Conductive fibres	5,431,856	No	Instytut Wlokiennictwa	Lodz, PL	Okoniewski; Marian K.:Szadowski; Jerzy S.:Bajda; Piotr J.:Kobus; Jerzy Z.:Koprowska; Joanna:Ratajczyk; Barbara E.	Lodz, PL:Lodz, PL:Lodz, PL:Lodz, PL:Lodz, PL:Lodz, PL	April 8, 1993	July 11, 1995
	5,384,285	Process for fabricating a silicide layer in a semiconductor device	5,384,285	No	Motorola, Inc.	Schaumburg, IL	Sitaram; Arkalgud:Maniar; Papu D.:Wetzel; Jeffrey T.	Austin, TX:Austin, TX:Austin, TX	July 26, 1993	January 24, 1995
	5,296,274	Method of producing carbon-containing materials by electron beam vacuum evaporation of graphite and subsequent condensation	5,296,274	No	n/a	n/a	Movchan; Boris A.:Grechanjuk; Nikolai I.:Chuikov; Jury B.:Paton; Boris E.:Stetsenko; Vladimir V.	ulitsa Darvina, 7, kv.7., Kiev, SU:bulvar Davydova, 7, kv.29., Kiev, SU:ulitsa Tsitadelnaya, 4/7, kv.18., Kiev, SU:ulitsa Chkalova, 41a, kv.26., Kiev, SU:ulitsa Malinovskogo, 11,kv.10., Kiev, SU	November 8, 1991	March 22, 1994
	5,169,969	Process for forming mixed bimetal alkoxide-carboxylate composition and novel compositions thereof	5,169,969	Yes This is a continuation-in-part of U.S. Ser. Nos. 534,824 and 552,633, filed Jun. 7, 1990 and Jul. 13, 1990, respectively.	Akzo nv	Arnhem, NL	Sherif; Fawzy G.	Stony Point, NY	July 19, 1991	December 8, 1992
	5,164,855	Counter electrode for electrochromic systems	5,164,855	No	Saint-Gobain Vitrage	Aubervilliers Cedex, FR	Buffat; Bernard:Lerbet; Francois:Defendini; Francis:Padoy; Christian	Paris, FR:Paris, FR:Paris, FR:Gonesse, FR	November 17, 1989	November 17, 1992
	5,078,771	Method of making high energy beam sensitive glasses	5,078,771	Yes CROSS-REFERENCE TO RELATED APPLICATIONS This application is a continuation-in-part of U.S. application Ser. No. 07/308,187, filed Feb. 7, 1989, on HIGH ENERGY BEAM SENSITIVE GLASSES by Che-Kuang Wu, now abandoned. This application is also a continuation-in-part of U.S. application Ser. No. 07/057,349, filed June 1, 1987, on HIGH ENERGY BEAM SENSITIVE GLASSES by Che-Kuang Wu, now U.S. Pat. No. 4,894,303 which is a divisional application of U.S. application Ser. No. 619,809, filed June 24, 1984, on HIGH ENERGY BEAM SENSITIVE GLASSES by Che-Kuang Wu, now U.S. Pat. No. 4,670,366, which is a continuation-in-part of application Ser. No. 507,681, filed June 24, 1983, on HIGH ENERGY BEAM COLORED GLASSES EXHIBITING INSENSITIVITY TO ACTINIC RADIATION by Che-Kuang Wu, now U.S. Pat. No. 4,567,104. These four prior applications are incorporated herein by reference.	Canyon Materials, Inc.	Riverside, CA	Wu; Che-Kuang	Riverside, CA	November 14, 1989	January 7, 1992
	5,070,591	Method for clad-coating refractory and transition metals and ceramic particles	5,070,591	No	n/a	n/a	Quick; Nathaniel R.:Kenney; James C.	44 Center Grove Rd., H15, Randolph, NJ 07869:5846 Carvel Ave., Indianapolis, IN 46220	January 22, 1990	December 10, 1991
	5,034,550	Process for forming mixed heavy bimetal alkoxide-carboxylate compositions and novel compositions thereof	5,034,550	Yes This is a continuation-in-part of U.S. Ser. No. 469,642, filed Jan. 24, 1990 now abandoned.	Akzo N.V.	Arnhem, NL	Sherif; Fawzy G.	Stony Point, NY	June 7, 1990	July 23, 1991
	4,867,840	Method of making artifically textured layered catalyst	4,867,840	Yes CROSS REFERENCE TO RELATED APPLICATIONS This application is a continuation-in-part application of copending Ser. No. 863,864, filed May 16, 1986, now abandoned.	Exxon Research and Engineering Company	Florham Park, NJ	Roxlo; Charles B.:Deckman; Harry W.:Tiedje; J. Thomas	Bridgewater, NJ:Clinton, NJ:Vancouver, CA	March 29, 1988	September 19, 1989
	4,781,754	Rapid solidification of plasma sprayed magnetic alloys	4,781,754	No	General Motors Corporation	Detroit, MI	Soranno; Vito W.:Pirrallo; Frank G.:Van Steenkiste; Thomas H.	Sterling Heights, MI:Troy, MI:Washington, MI	September 24, 1987	November 1, 1988
	4,753,675	Method of preparing a magnetic material	4,753,675	No	Ovonic Synthetic Materials, Inc.	Troy, MI	Ovshinsky; Stanford R.:Hudgens; Stephen J.:Allred; David D.:DeMaggio; Gregory:Custer; Russell C.	Bloomfield Hills, MI:Southfield, MI:Troy, MI:Bloomfield Hills, MI:Clawson, MI	October 17, 1986	June 28, 1988
	4,751,048	Process for forming metal-second phase composites and product thereof	4,751,048	Yes CROSS REFERENCE TO RELATED APPLICATION This is a continuation-in-part of application Ser. No. 662,928, filed Oct. 19, 1984 now abandoned.	Martin Marietta Corporation	Bethesda, MD	Christodoulou; Leontios:Nagle; Dennis C.:Brupbacher; John M.	Baltimore, MD:Ellicott City, MD:Baltimore, MD	November 5, 1986	* June 14, 1988
	4,715,891	Method of preparing a magnetic material	4,715,891	No	Ovonic Synthetic Materials Company, Inc.	Troy, MI	Ovshinsky; Stanford R.:Hudgens; Stephen J.:Allred; David D.:DeMaggio; Gregory	Bloomfield Hills, MI:Southfield, MI:Troy, MI:Bloomfield Hills, MI	October 17, 1986	December 29, 1987
	4,562,511	Electric double layer capacitor	4,562,511	No	Matsushita Electric Industrial Co., Ltd.	Kadoma, JP	Nishino; Atsushi:Yoshida; Akihiko:Tanahashi; Ichiroh	Neyagawa, JP:Osaka, JP:Neyagawa, JP	February 28, 1984	December 31, 1985
	4,152,166	Zircon-containing compositions and ceramic bodies formed from such compositions	4,152,166	No	Foseco Trading AG.	CH	Rogers; Maurice G.	Nechells, GB2	March 22, 1977	May 1, 1979
	3,994,707	Solid film lubricant laminates and their use in glass manufacturing	3,994,707	Yes CROSS REFERENCES TO RELATED APPLICATIONS This is a continuation-in-part application of U.S. Ser. No. 583,150 filed June 2, 1975.	Owens-Illinois, Inc.	Toledo, OH	Newing, Jr.; Charles W.:Moore; Robert H.	Toledo, OH:Temperance, MI	July 16, 1975	* November 30, 1976