| Classification | Number | Url | PMD | Priority | Assignee | Assignee Loc | Inventor(s) | Inventor Loc(s) | Filing Date | Issued Date |
| 6,794,287 | Process for growing metal or metal carbide thin films utilizing boron-containing reducing agents | 6,794,287 | N/A | |||||||
| 6,787,181 | Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth | 6,787,181 | No | Symetrix Corporation:Matsushita Electric Industrial Co., Ltd. | Colorado Springs, CO:JP | Uchiyama; Kiyoshi:Solayappan; Narayan:Paz de Araujo; Carlos A. | Colorado Springs, CO:Colorado Springs, CO:Colorado Springs, CO | October 26, 2001 | September 7, 2004 | |
| 6,786,936 | Methods, complexes, and systems for forming metal-containing films on semiconductor structures | 6,786,936 | N/A | |||||||
| 6,784,509 | Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus | 6,784,509 | N/A | |||||||
| 6,770,882 | Micromachined pyro-optical structure | 6,770,882 | N/A | |||||||
| 6,730,421 | Magnetic recording medium and its production method, and magnetic recorder | 6,730,421 | N/A | |||||||
| 6,727,593 | Semiconductor device with improved bonding | 6,727,593 | N/A | |||||||
| 6,723,477 | Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask | 6,723,477 | N/A | |||||||
| 6,709,775 | Magnetic recording medium and production method thereof and magnetic recording device | 6,709,775 | N/A | |||||||
| 6,706,572 | Method for manufacturing a thin film transistor using a high pressure oxidation step | 6,706,572 | N/A | |||||||
| 6,699,372 | Method of coil preparation for ionized metal plasma process and method of manufacturing integrated circuits | 6,699,372 | N/A | |||||||
| 6,691,404 | Fabricating of a flat-panel displace using porous spacer | 6,691,404 | N/A | |||||||
| 6,689,477 | Target for transparent electroconductive film, transparent electroconductive material, transparent electroconductive glass and transparent electroconductive film | 6,689,477 | N/A | |||||||
| 6,641,948 | Fuel cells having silicon substrates and/or sol-gel derived support structures | 6,641,948 | N/A | |||||||
| 6,624,864 | Liquid crystal display device, matrix array substrate, and method for manufacturing matrix array substrate | 6,624,864 | N/A | |||||||
| 6,624,384 | Method for manufacturing infrared ray sensor | 6,624,384 | N/A | |||||||
| 6,614,178 | Solid-state excimer devices and processes for producing same | 6,614,178 | N/A | |||||||
| 6,613,088 | Coated ophthalmic and implantable devices and methods for producing same | 6,613,088 | N/A | |||||||
| 6,596,398 | Solar control coated glass | 6,596,398 | N/A | |||||||
| 6,582,506 | Pigment flakes | 6,582,506 | N/A | |||||||
| 6,576,344 | Photocatalyst article, anti-fogging, anti-soiling articles, and production method of anti-fogging, anti-soiling articles | 6,576,344 | N/A | |||||||
| 6,562,127 | Method of making mosaic array of thin semiconductor material of large substrates | 6,562,127 | No | The United States of America as represented by the Secretary of the Navy | Washington, DC | Kud; Francis:Hobart; Karl:Spencer; Mike | Arnold, MD:Upper Marlboro, MD:Washington, DC | January 16, 2002 | May 13, 2003 | |
| 6,534,183 | Target for transparent electroconductive film, transparent electroconductive material, transparent electroconductive glass, and transparent electroconductive film | 6,534,183 | N/A | |||||||
| 6,524,958 | Method of forming channel in thin film transistor using non-ionic excited species | 6,524,958 | N/A | |||||||
| 6,521,999 | Transparent electrode film and group III nitride semiconductor device | 6,521,999 | N/A | |||||||
| 6,517,968 | Thin lithium film battery | 6,517,968 | N/A | |||||||
| 6,511,910 | Method for manufacturing semiconductor devices | 6,511,910 | N/A | |||||||
| 6,495,289 | Lithium secondary cell with an alloyed metallic powder containing electrode | 6,495,289 | N/A | |||||||
| 6,489,613 | Oxide thin film for bolometer and infrared detector using the oxide thin film | 6,489,613 | N/A | |||||||
| 6,488,782 | Method of reducing corrosion potential and stress corrosion cracking susceptibility in nickel-based alloys | 6,488,782 | N/A | |||||||
| 6,486,077 | Silicon nitride film, semiconductor device, and method for fabricating semiconductor device | 6,486,077 | N/A | |||||||
| 6,485,619 | Method for forming metal oxide film | 6,485,619 | N/A | |||||||
| 6,485,346 | Field emitter for microwave devices and the method of its production | 6,485,346 | N/A | |||||||
| 6,465,954 | Cathode structure with getter material and diamond film, and methods of manufacture thereof | 6,465,954 | N/A | |||||||
| 6,451,959 | Catalyst for polyester production, process for producing polyester using the catalyst, polyester obtained by the process, and uses of the polyester | 6,451,959 | N/A | |||||||
| 6,450,622 | Fluid ejection device | 6,450,622 | N/A | |||||||
| 6,444,051 | Method of manufacturing a grain-oriented electromagnetic steel sheet | 6,444,051 | N/A | |||||||
| 6,426,282 | Method of forming solder bumps on a semiconductor wafer | 6,426,282 | N/A | |||||||
| 6,417,030 | Leaky lower interface for reduction of floating body effect in SOI devices | 6,417,030 | N/A | |||||||
| 6,413,385 | Thin-film temperature-sensitive resistor material and production process thereof | 6,413,385 | N/A | |||||||
| 6,399,478 | Method of making a dual damascene structure with modified insulation | 6,399,478 | N/A | |||||||
| 6,399,228 | Multi-layer interference coatings | 6,399,228 | N/A | |||||||
| 6,395,434 | Phase shift mask and phase shift mask blank | 6,395,434 | N/A | |||||||
| 6,362,084 | Method of manufacturing a substrate for displays and a substrate for displays manufactured by same | 6,362,084 | N/A | |||||||
| 6,349,669 | Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction | 6,349,669 | N/A | |||||||
| 6,348,705 | Low temperature process for high density thin film integrated capacitors and amorphously frustrated ferroelectric materials therefor | 6,348,705 | N/A | |||||||
| 6,346,465 | Semiconductor device with silicide contact structure and fabrication method thereof | 6,346,465 | N/A | |||||||
| 6,339,220 | Thermal infrared detecting device | 6,339,220 | N/A | |||||||
| 6,331,994 | Excimer laser oscillation apparatus and method, excimer laser exposure apparatus, and laser tube | 6,331,994 | N/A | |||||||
| 6,326,318 | Process for producing semiconductor devices including an insulating layer with an impurity | 6,326,318 | N/A | |||||||
| 6,303,483 | Method of manufacturing semiconductor device | 6,303,483 | N/A | |||||||
| 6,288,842 | Sheeting with composite image that floats | 6,288,842 | N/A | |||||||
| 6,288,437 | Antifuse structures methods and applications | 6,288,437 | N/A | |||||||
| 6,284,376 | Ornamental article and process for producing the same | 6,284,376 | No | Kyocera Corporation | Kyoto, JP | Takenouchi; Kazunori:Koshida; Mitsuhiko:Kijima; Kouichi:Hayashi; Shinichi | Kokubu, JP:Kokubu, JP:Sendai, JP:Sendai, JP | December 29, 1998 | September 4, 2001 | |
| 6,281,124 | Methods and systems for forming metal-containing films on substrates | 6,281,124 | No | Micron Technology, Inc. | Boise, ID | Vaartstra; Brian A. | Nampa, ID | September 2, 1998 | August 28, 2001 | |
| 6,279,913 | Sliding member and manufacturing method thereof | 6,279,913 | No | Teikoku Piston Ring Co., Ltd. | Tokyo, JP | Iwashita; Takatsugu:Yamashita; Nobuyuki | Matsumoto, JP:Shiojiri, JP | July 13, 1999 | August 28, 2001 | |
| 6,277,187 | Film for cutting off heat rays and a coating liquid for forming the same | 6,277,187 | No | Sumitomo Metal Mining Co., Ltd. | Tokyo, JP | Kuno; Hiroko:Takeda; Hiromitsu:Adachi; Kenji | Matsudo, JP:Ichikawa, JP:Inzai, JP | October 8, 1998 | August 21, 2001 | |
| 6,274,932 | Semiconductor device having metal interconnection comprising metal silicide and four conductive layers | 6,274,932 | No | NEC Corporation | Tokyo, JP | Mikagi; Kaoru | Tokyo, JP | August 28, 1995 | August 14, 2001 | |
| 6,268,657 | Semiconductor devices and an insulating layer with an impurity | 6,268,657 | Yes
| Sanyo Electric Co., Ltd. | Osaka, JP | Watanabe; Hiroyuki:Mizuhara; Hideki:Misawa; Kaori:Hirase; Masaki:Aoe; Hiroyuki | Bisai, JP:Bisai, JP:Gifu-ken, JP:Yokohama, JP:Joyo, JP | June 18, 1997 | July 31, 2001 | |
| 6,258,157 | Liquid precursors for formation of metal oxides | 6,258,157 | Yes
| President and Fellows of Harvard College | Cambridge, MA | Gordon; Roy G. | Cambridge, MA | September 9, 1999 | July 10, 2001 | |
| 6,242,045 | Process of preparing metal nitride films using a metal halide and an amine | 6,242,045 | Yes
| Visteon Global Technologies, Inc. | Dearborn, MI | Proscia; James William:Williams; Keith Brian:Reck; Gene P. | Dearborn, MI:Detroit, MI:Franklin, MI | June 24, 1993 | June 5, 2001 | |
| 6,228,284 | Oxygen scavenging compositions with low migration | 6,228,284 | Yes
| W. R. Grace & Co.-Conn | Columbia, MD | Ebner; Cynthia Louise:Blinka; Thomas Andrew | New Market, MD:Columbia, MD | October 30, 1998 | May 8, 2001 | |
| 6,218,018 | Solar control coated glass | 6,218,018 | Yes
| Atofina Chemicals, Inc. | Philadephia, PA | McKown; Clem:Russo; David A.:Roger; Christophe:Stricker; Jeffrey L. | Glenmoore, PA:Audubon, PA:Limerick, PA:Montgomery County, PA | February 16, 1999 | April 17, 2001 | |
| 6,214,749 | Process for producing semiconductor devices | 6,214,749 | Yes
| Sanyo Electric Co., Ltd. | JP | Watanabe; Hiroyuki:Mizuhara; Hideki:Misawa; Kaori:Hirase; Masaki:Aoe; Hiroyuki | Bisai, JP:Hashima, JP:Gifu-ken, JP:Hashima, JP:Joyo, JP | October 21, 1997 | April 10, 2001 | |
| 6,214,530 | Base film with a conductive layer and a magnetic layer | 6,214,530 | No | Tulalip Consultoria Comercial Sociedade Unidessoal S.A. | Parish of San Pedro, PT | Morrison; Eric D.:Puppo; Paola | St. Paul, MN:Cogoleto, IT | June 30, 1999 | April 10, 2001 | |
| 6,168,980 | Semiconductor device and method for forming the same | 6,168,980 | Yes
| Semiconductor Energy Laboratory Co., Ltd. | Kanagawa, JP | Yamazaki; Shunpei:Zhang; Hongyong | Tokyo, JP:Kanagawa, JP | September 26, 1996 | January 2, 2001 | |
| 6,162,577 | Method for extreme ultraviolet lithography | 6,162,577 | Yes
| n/a | n/a | Felter; T. E.:Kubiak; G. D. | 727 Clara St., Livermore, Alameda County, CA 94550:475 Maple St., Livermore, Alameda County, CA 94550 | September 21, 1998 | December 19, 2000 | |
| H1,924 | Load-adaptive nanocrystalline carbon/amorphous diamond-like carbon composite and preparation method | H1,924 | N/A | |||||||
| 6,144,479 | Low reflectivity contrast enhancement filter | 6,144,479 | No | 3M Innovative Properties Company | St. Paul, MN | Lugg; Paul S.:Budd; Kenton D.:Bailey; John E.:Frey; Matthew H.:Theirl; Scott G. | Woodbury, MN:Woodbury, MN:Edina, MN:Maplewood, MN:Stillwater, MN | December 16, 1998 | November 7, 2000 | |
| 6,142,481 | Piston ring | 6,142,481 | No | Teikoku Piston Ring Co., Ltd. | Tokyo, JP | Iwashita; Takatsugu:Yamashita; Nobuyuki | Matsumoto, JP:Shiojiri, JP | September 28, 1998 | November 7, 2000 | |
| 6,139,022 | Piston ring | 6,139,022 | No | Teikoku Piston Ring Co., Ltd. | Tokyo, JP | Iwashita; Takatsugu:Yamashita; Nobuyuki | Matsumoto, JP:Shiojiri, JP | September 28, 1998 | October 31, 2000 | |
| 6,127,914 | Thin-film temperature-sensitive resistor material and production process thereof | 6,127,914 | No | NEC Corporation | Tokyo, JP | Sasaki; Tokuhito | Tokyo, JP | May 19, 1998 | October 3, 2000 | |
| 6,119,485 | Press-molding die, method for manufacturing the same and glass article molded with the same | 6,119,485 | No | Matsushita Electric Industrial Co., Ltd. | Osaka, JP | Hibino; Kunio:Umetani; Makoto:Kataoka; Hidenao | Osaka, JP:Osaka, JP:Osaka, JP | February 19, 1998 | September 19, 2000 | |
| 6,103,400 | Electrode for dielectric-thin film device, and ultrasonic wave oscillator using the electrode | 6,103,400 | No | Mitsubishi Denki Kabushiki Kaisha | Tokyo, JP | Yamada; Akira:Sato; Takehiko:Maeda; Chisako:Umemura; Toshio:Uchikawa; Fusaoki | Tokyo, JP:Tokyo, JP:Tokyo, JP:Tokyo, JP:Tokyo, JP | May 20, 1998 | August 15, 2000 | |
| 6,094,292 | Electrochromic window with high reflectivity modulation | 6,094,292 | Yes
| Trustees of Tufts College | Medford, MA | Goldner; Ronald B.:Gerouki; Alexandra:Liu; Te-Yang:Goldner; Mark A.:Haas; Terry E. | Lexington, MA:Medford, MA:Arlington, MA:Cambridge, MA:Southborough, MA | February 20, 1998 | July 25, 2000 | |
| 6,087,047 | Phase shift mask and phase shift mask blank | 6,087,047 | No | Hoya Corporation | Tokyo, JP | Mitsui; Hideaki:Nozawa; Osamu:Takeuchi; Megumi | Tokyo, JP:Tokyo, JP:Tokyo, JP | September 15, 1998 | July 11, 2000 | |
| 6,086,786 | Oxygen scavenging metal-loaded ion-exchange composition | 6,086,786 | Yes
| W. R. Grace & Co. -Conn. | New York, NY | Blinka; Thomas Andrew:Speer; Drew Ve:Feehley, Jr.; William Alfred | Columbia, MD:Columbia, MD:Kingsville, MD | June 21, 1999 | July 11, 2000 | |
| 6,069,094 | Method for depositing a thin film | 6,069,094 | No | Hideki Matsumra:NEC Corporation:ANELVA Corporation | Kanazawa, JP:Tokyo, JP:Tokyo, JP | Matsumura; Hideki:Izumi; Akira:Masuda; Atsushi:Nashimoto; Yasunobu:Miyoshi; Yosuke:Nomura; Shuji:Sakurai; Kazuo:Aoshima; Shouichi | Kanazawa, JP:Nomi-gun, JP:Nomi-gun, JP:Tokyo, JP:Tokyo, JP:Tachikawa, JP:Fuchu, JP:Inagi, JP | September 5, 1997 | May 30, 2000 | |
| 6,063,556 | Radiographic material with improved antistatic properties utilizing colloidal vanadium oxide | 6,063,556 | No | Minnesota Mining and Manufacturing Co. | St. Paul, MN | Valsecchi; Alberto:Torterolo; Renzo | Vado Ligure, IT:Bragno/Cairo Montenotte, IT | October 27, 1994 | May 16, 2000 | |
| 6,048,678 | Protective overcoat coating compositions | 6,048,678 | Yes
| Eastman Kodak Company | Rochester, NY | Schwark; Dwight W.:Wang; Yongcai:Kress; Robert J. | Rochester, NY:Penfield, NY:Rochester, NY | December 28, 1998 | April 11, 2000 | |
| 6,028,977 | All-optical, flat-panel display system | 6,028,977 | Yes
| Moriah Technologies, Inc. | McLean, VA | Newsome; Edward E. | McLean, VA | November 8, 1996 | February 22, 2000 | |
| 6,022,669 | Method of fabricating an integrated circuit using self-patterned thin films | 6,022,669 | Yes
| Symetrix Corporation:Mitsubishi Materials Corporation | Colorado Springs, CO:JP | Uchida; Hiroto:Soyama; Nobuyuki:Kageyama; Kensuke:Ogi; Katsumi:Scott; Michael C.:Cuchiaro; Joseph D.:Derbenuick; Gary F.:McMillan; Larry D.:Paz de Araujo; Carlos A. | Saitama, JP:Saitama, JP:Saitama, JP:Saitama, JP:Colorado Springs, CO:Colorado Springs, CO:Colorado Springs, CO:Colorado Springs, CO:Colorado Springs, CO | July 26, 1996 | February 8, 2000 | |
| 6,013,399 | Reworkable EUV mask materials | 6,013,399 | No | Advanced Micro Devices, Inc. | Sunnyvale, CA | Nguyen; Khanh B. | San Mateo, CA | December 4, 1998 | January 11, 2000 | |
| 6,008,869 | Display device substrate and method of manufacturing the same | 6,008,869 | No | Kabushiki Kaisha Toshiba | Kawasaki, JP | Oana; Yasuhisa:Ibaraki; Nobuki:Dohjo; Masayuki:Kamata; Yoshitaka | Yokohama, JP:Kanagawa-ken, JP:Himeji, JP:Yokoham, JP | December 13, 1995 | December 28, 1999 | |
| 6,005,764 | Method to fabricate a reliable electrical storage device and the device thereof | 6,005,764 | Yes
| Pinnacle Research Institute, Inc. | Los Gatos, CA | Anderson; Ronald L.:Goodwin; Mark L.:Mason; Gary E.:McEwen; Alan B.:Nelson; James P.:Poplett; James M.:Tong; Robert R.:Tsai; K. C. | Lina Lakes, MN:Santa Cruz, CA:Sunnyvale, CA:Palo Alto, CA:Shoreview, MN:Cupertino, CA:Sunnyvale, CA:Saratoga, CA | November 6, 1995 | December 21, 1999 | |
| 6,005,335 | Self-gettering electron field emitter | 6,005,335 | Yes
| Advanced Vision Technologies, Inc. | W. Henrietta, NY | Potter; Michael D | Churchville, NY | December 15, 1997 | December 21, 1999 | |
| 5,993,701 | Third-order nonlinear optical material and method for production thereof | 5,993,701 | No | Industrial Science & Technology | Tokyo, JP | Ando; Masanori:Sakaguchi; Toru:Kobayashi; Tetsuhiko:Teshima; Seiichi:Asako; Yoshinobu | Osaka, JP:Osaka, JP:Osaka, JP:Ibaraki, JP:Ibaraki, JP | November 26, 1997 | November 30, 1999 | |
| 5,993,688 | Oxygen scavenging metal-loaded ion-exchange compositions | 5,993,688 | Yes
| W. R. Grace & Co. -Conn. | New York, NY | Blinka; Thomas Andrew:Speer; Drew Ve:Feehley, Jr.; William Alfred | Columbia, MD:Columbia, MD:Kingsville, MD | March 25, 1998 | November 30, 1999 | |
| 5,989,988 | Semiconductor device and method of manufacturing the same | 5,989,988 | No | Kabushiki Kaisha Toshiba | Kawasaki, JP | Iinuma; Toshihiko:Suguro; Kyoichi:Nadahara; Soichi | Yokohama, JP:Yokohama, JP:Yokohama, JP | November 16, 1998 | November 23, 1999 | |
| 5,981,049 | Coated tool and method of manufacturing the same | 5,981,049 | No | Sumitomo Electric Industries, Ltd. | Osaka, JP | Ohara; Hisanori:Arimoto; Hiroshi:Murakami; Reizo:Kitagawa; Nobuyuki:Noguchi; Kazuo:Okada; Yasutaka | Hyogo, JP:Hyogo, JP:Hyogo, JP:Hyogo, JP:Hyogo, JP:Hyogo, JP | November 20, 1997 | November 9, 1999 | |
| 5,980,977 | Method of producing high surface area metal oxynitrides as substrates in electrical energy storage | 5,980,977 | Yes
| Pinnacle Research Institute, Inc. | Los Gatos, CA | Deng; Charles Z.:Tsai; Keh Chi:Ghantous; Dania | Campbell, CA:Saratoga, CA:San Jose, CA | December 9, 1996 | November 9, 1999 | |
| 5,976,711 | Bearing surfaces of hypereutectic alloys modified to increase lubricant effectiveness | 5,976,711 | No | Southwest Research Institute | San Antonio, TX | Dearnaley; Geoffrey | San Antonio, TX | February 3, 1998 | November 2, 1999 | |
| 5,954,975 | Slurries for chemical mechanical polishing tungsten films | 5,954,975 | Yes
| Intel Corporation | Santa Clara, CA | Cadien; Kenneth C.:Feller; Daniel A. | Portland, OR:Portland, OR | February 7, 1997 | September 21, 1999 | |
| 5,911,899 | Corrosion-proof transparent heater panels and preparation process thereof | 5,911,899 | No | Mitsui Chemicals, Inc. | Tokyo, JP | Yoshikai; Masaaki:Takahashi; Koichi:Koyama; Masato:Harada; Yuichiro:Sakai; Yoshihiro:Nakajima; Akemi:Dodo; Toshihiro | Aichi-ken, JP:Aichi-ken, JP:Aichi-ken, JP:Aichi-ken, JP:Aichi-ken, JP:Aichi-ken, JP:Kanagawa-ken, JP | June 11, 1996 | June 15, 1999 | |
| 5,906,909 | Wet lithographic printing constructions incorporating metallic inorganic layers | 5,906,909 | No | Presstek, Inc. | Hudson, NH | Ellis; Ernest | Harvard, MA | January 6, 1997 | May 25, 1999 | |
| 5,900,661 | EEPROM with bit lines below word lines | 5,900,661 | No | Nippon Steel Corporation | Tokyo, JP | Sato; Yasuo | Tokyo, JP | September 16, 1997 | May 4, 1999 | |
| 5,896,005 | High speed solid state optical display | 5,896,005 | No | Copytele, Inc. | Huntington Station, NY | Gurvitch; Michael:Halioua; Maurice:Kastalsky; Alexander:Naar; Sylvain:Shokhor; Sergey | Stony Brook, NY:Sea Cliff, NY:Wayside, NJ:Scarsdale, NY:Sound Beach, NY | January 29, 1997 | April 20, 1999 | |
| 5,873,953 | Non-chromated oxide coating for aluminum substrates | 5,873,953 | No | The Boeing Company | Seattle, WA | Schriever; Matthias P. | Kent, WA | December 26, 1996 | February 23, 1999 | |
| 5,868,912 | Electrochemical cell having an oxide growth resistant current distributor | 5,868,912 | Yes
| E. I. du Pont de Nemours and Company | Wilmington, DE | Reichert; David Lee:Seastrom; Charles Collmar:Felix; Vinci Martinez:Law, Jr.; Clarence Garlan:Trainham, III; James Arthur:Newman; John Scott | Boothwyn, PA:New Castle, DE:Kennett Square, PA:West Trenton, NJ:Greenville, DE:Kensington, CA | November 3, 1997 | February 9, 1999 | |
| 5,854,870 | Short-wavelength laser light source | 5,854,870 | Yes
| Hitachi, Ltd.:Hitachi Metals, Ltd. | Tokyo, JP:Tokyo, JP | Helmfrid; Sten:Ito; Kenchi:Tatsuno; Kimio:Kawamoto; Kazumi:Andou; Tetsuo:Momiji; Hiroshi:Komoda; Osamu:Kurosawa; Hisao:Sato; Masayoshi:Nitanda; Fumio:Ito; Kohei | Musashino, JP:Kokubunji, JP:Tokyo, JP:Kokubunji, JP:Kokubunji, JP:Kokubunji, JP:Kokubunji, JP:Fukaya, JP:Fukaya, JP:Fukaya, JP:Fukaya, JP | March 4, 1993 | December 29, 1998 | |
| 5,847,730 | Hydrophilic ink passage | 5,847,730 | Yes
| Seiko Epson Corporation | Tokyo-To, JP | Miyashita; Satoru:Takemoto; Kiyohiko | Suwa, JP:Suwa, JP | September 27, 1996 | December 8, 1998 | |
| 5,843,589 | Magnetic layered material, and magnetic sensor and magnetic storage/read system based thereon | 5,843,589 | No | Hitachi, Ltd. | Tokyo, JP | Hoshiya; Hiroyuki:Hamakawa; Yoshihiro:Soeya; Susumu:Tadokoro; Shigeru | Hitachi, JP:Urawa, JP:Hitachi, JP:Odawara, JP | December 17, 1996 | December 1, 1998 | |
| 5,831,694 | TFT panel for high resolution- and large size- liquid crystal display | 5,831,694 | No | Hitachi, Ltd. | Tokyo, JP | Onisawa; Kenichi:Kaneko; Toshiki:Hashimoto; Kenichi:Minemura; Tetsuroh | Hitachinaka, JP:Chiba, JP:Hitachinaka, JP:Hitachioota, JP | June 13, 1996 | November 3, 1998 | |
| 5,825,437 | Structure of a liquid crystal display device and a method of manufacturing same | 5,825,437 | No | LG Electronics Inc. | Seoul, KR | Seo; Hyun Sik:Kim; In Woo | Seoul, KR:Kyungki-do, KR | February 13, 1996 | October 20, 1998 | |
| 5,821,033 | Photolithographic production of microprotrusions for use as a space separator in an electrical storage device | 5,821,033 | Yes
| Pinnacle Research Institute, Inc. | Los Gatos, CA | Cromack; Douglas:Goodwin; Mark L.:Poplett; James M.:Tong; Robert | Menlo Park, CA:Santa Cruz, CA:Golden Valley, MN:Fridley, MN | November 25, 1994 | October 13, 1998 | |
| 5,798,055 | Oxygen scavenging metal-loaded ion-exchange compositions | 5,798,055 | Yes
| n/a | n/a | Blinka; Thomas Andrew:Speer; Drew Ve:Feehley, Jr.; William Alfred | 11604 Wave Lap, Columbia, MD 21044:6229 Slender Sky, Columbia, MD 21044:12105 Stoney Batter Rd., Kingsville, MD 21087 | December 3, 1996 | August 25, 1998 | |
| 5,795,679 | Lithium secondary cell with an alloyed metallic powder containing electrode | 5,795,679 | No | Canon Kabushiki Kaisha | Tokyo, JP | Kawakami; Soichiro:Mishina; Shinya:Kobayashi; Naoya:Asao; Masaya | Nara, JP:Kawasaki, JP:Nara, JP:Tsuzuki-gun, JP | October 17, 1995 | August 18, 1998 | |
| 5,774,516 | Modification of oxide film electrical conductivity to maintain low corrosion potential in high-temperature water | 5,774,516 | Yes
| General Electric Company | Schenectady, NY | Hettiarachchi; Samson:Kim; Young J.:Andresen; Peter L.:Diaz; Thomas P. | Menlo Park, CA:Clifton Park, NY:Schenectady, NY:San Martin, CA | August 15, 1996 | June 30, 1998 | |
| 5,768,330 | Co-deposition of palladium during oxide film growth in high-temperature water to mitigate stress corrosion cracking | 5,768,330 | Yes
| General Electric Company | Schenectady, NY | Andresen; Peter Louis:Hettiarachchi; Samson:Kim; Young Jin:Diaz; Thomas Pompilio | Schenectady, NY:Menlo Park, CA:Clifton Park, NY:San Martin, CA | October 10, 1996 | June 16, 1998 | |
| 5,751,313 | Hydrophilic ink passage | 5,751,313 | Yes
| Seiko Epson Corporation | Tokyo-to, JP | Miyashita; Satoru:Takemoto; Kiyohiko | Suwa, JP:Suwa, JP | January 23, 1995 | May 12, 1998 | |
| 5,738,698 | Brazing of diamond film to tungsten carbide | 5,738,698 | Yes
| Saint Gobain/Norton Company Industrial Ceramics Corp. | Worcester, MA | Kapoor; Rakesh R.:Nagy; Bela G.:Bigelow; Louis K. | Shrewsbury, MA:Acton, MA:Boylston, MA | April 30, 1996 | April 14, 1998 | |
| 5,737,117 | Second harmonic generation element and a process for producing the same | 5,737,117 | No | NGK Insulators, Ltd. | JP | Imaeda; Minoru:Imai; Katsuhiro:Kawaguchi; Tatsuo:Yoshino; Takashi:Honda; Akihiko | Nagoya, JP:Nagoya, JP:Nagoya, JP:Nagoya, JP:Nagoya, JP | April 5, 1996 | April 7, 1998 | |
| 5,726,001 | Composite support for imaging elements comprising an electrically-conductive layer and polyurethane adhesion promoting layer on an energetic surface-treated polymeric film | 5,726,001 | No | Eastman Kodak Company | Rochester, NY | Eichorst; Dennis John | Fairport, NY | June 12, 1996 | March 10, 1998 | |
| 5,718,995 | Composite support for an imaging element, and imaging element comprising such composite support | 5,718,995 | No | Eastman Kodak Company | Rochester, NY | Eichorst; Dennis John:Fleischer; Cathy Ann:Grace; Jeremy:Yocobucci; Paul Daniel | Fairport, NY:Rochester, NY:Rochester, NY:Rochester, NY | June 12, 1996 | February 17, 1998 | |
| 5,713,133 | Methods of preparing cemented metal carbide substrates for deposition of adherent diamond coatings and products made therefrom | 5,713,133 | Yes
| Valenite Inc. | Madison Heights, MI | Bhat; Deepak G.:Johnson; Darrell:Bennett; Stephen L. | Troy, MI:Rochester Hills, MI:Rochester Hills, MI | June 27, 1996 | February 3, 1998 | |
| 5,709,985 | Photographic element comprising antistatic layer | 5,709,985 | No | Minnesota Mining and Manufacturing Company | St. Paul, MN | Morrison; Eric D.:Puppo; Paola:Valsecchi; Alberto:Martino; Elio:Kausch; William L.:Torterolo; Renzo | St. Paul, MN:St. Paul, MN:St. Paul, MN:St. Paul, MN:St. Paul, MN:St. Paul, MN | November 13, 1995 | January 20, 1998 | |
| 5,709,984 | Coating composition for electrically-conductive layer comprising vanadium oxide gel | 5,709,984 | No | Eastman Kodak Company | Rochester, NY | Chen; Janglin:Castle; Richard A.:Gleasman; Karen E. | Rochester, NY:Webster, NY:Rochester, NY | October 31, 1996 | January 20, 1998 | |
| 5,700,613 | Photoconductor for electrophotography | 5,700,613 | No | Fuji Electric Co., Ltd. | Kawasaki, JP | Nogami; Sumitaka:Kitazawa; Michihiro:Sato; Katsuhiro | Kawasaki, JP:Kawasaki, JP:Kawasaki, JP | January 11, 1996 | December 23, 1997 | |
| 5,693,595 | Integrated thin-film terminations for high temperature superconducting microwave components | 5,693,595 | No | Northrop Grumman Corporation | Los Angeles, CA | Talisa; Salvador H.:Meier; Daniel L. | Edgewood, PA:Forest Hills, PA | June 6, 1995 | December 2, 1997 | |
| 5,687,265 | Optical control device and method for making the same | 5,687,265 | No | NEC Corporation | Tokyo, JP | Nishimoto; Hiroshi:Kambe; Toshiyuki | Tokyo, JP:Tokyo, JP | September 27, 1995 | November 11, 1997 | |
| 5,660,971 | Thin film device and a method for fabricating the same | 5,660,971 | Yes
| Matsushita Electric Industrial Co., Ltd. | Osaka, JP | Kobayashi; Ikunori:Ishihara; Shinichiro:Okafuji; Michiko | Sakai, JP:Takatsuki, JP:Katano, JP | April 15, 1996 | August 26, 1997 | |
| 5,648,114 | Chemical vapor deposition process for fabricating layered superlattice materials | 5,648,114 | Yes
| Symetrix Corporation:Olympus Optical Co., Ltd. | Colorado Springs, CO:Tokyo, JP | Paz De Araujo; Carlos A.:Watanabe; Hitoshi:Scott; Michael C.:Mihara; Takashi | Colorado Springs, CO:Tokyo, JP:Colorado Springs, CO:Saitama, JP | July 12, 1993 | July 15, 1997 | |
| 5,645,937 | Thin film layered member | 5,645,937 | No | Kabushiki Kaisha Toyota Chuo Kenkyusho:Aichi Steel Works, Ltd. | Aichi-ken, JP:Tokai, JP | Noda; Shoji:Uchida; Kiyoshi:Itoh; Akio:Higuchi; Kazuo:Niimi; Mikio:Murasaki; Shun-ichi:Honkura; Yoshinobu | Aichi-ken, JP:Toyota, JP:Nagoya, JP:Seto, JP:Handa, JP:Nagoya, JP:Aichi-ken, JP | December 28, 1995 | July 8, 1997 | |
| 5,641,921 | Low temperature, low pressure, ductile, bonded cermet for enhanced abrasion and erosion performance | 5,641,921 | No | Dennis Tool Company | Houston, TX | Dennis; Mahlon Denton:Hampshire; Barton | Houston, TX:Houston, TX | August 22, 1995 | June 24, 1997 | |
| 5,637,368 | Adhesive tape having antistatic properties | 5,637,368 | Yes
| Minnesota Mining and Manufacturing Company | St. Paul, MN | Cadalbert; David A.:Morrison; Eric D.:Johnson; Tamara L.:Kausch; William L.:Boston; David R.:Larson; Wayne K.:Hedrick; Steven T. | Woodbury, MN:West St. Paul, MN:Oakdale, MN:Cottage Grove, MN:Woodbury, MN:Maplewood, MN:Cottage Grove, MN | April 20, 1993 | June 10, 1997 | |
| 5,625,202 | Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth | 5,625,202 | No | University of Central Florida | Orlando, FL | Chai; Bruce H. T. | Oviedo, FL | June 8, 1995 | April 29, 1997 | |
| 5,616,218 | Modification and selection of the magnetic properties of magnetic recording media through selective control of the crystal texture of the recording layer | 5,616,218 | No | Matereials Research Corporation:Sony Corporation | Orangeburg, NY:Tokyo, JP | Alex; Michael | Milpitas, CA | September 12, 1994 | April 1, 1997 | |
| 5,612,571 | Sputtered silicide film | 5,612,571 | Yes
| Kabushiki Kaisha Toshiba | Kawasaki, JP | Satou; Michio:Yamanobe; Takasi:Kawai; Mituo:Komatu; Tooru:Shizu; Hiromi:Yagi; Noriaki | Yokohama, JP:Yokohama, JP:Yokohama, JP:Yokosuka, JP:Fujisawa, JP:Yokohama, JP | August 9, 1995 | March 18, 1997 | |
| 5,608,766 | Co-deposition of palladium during oxide film growth in high-temperature water to mitigate stress corrosion cracking | 5,608,766 | Yes
| General Electric Company | Schenectady, NY | Andresen; Peter L.:Hettiarachchi; Samson:Kim; Young J.:Diaz; Thomas P. | Schenectady, NY:Menlo Park, CA:Clifton Park, NY:San Martin, CA | October 13, 1994 | March 4, 1997 | |
| 5,607,825 | Gelatin compatible antistatic coating composition | 5,607,825 | No | Minnesota Mining and Manufacturing | St. Paul, MN | Carlson; Robert L. | St. Paul, MN | June 8, 1995 | March 4, 1997 | |
| 5,595,937 | Method for fabricating semiconductor device with interconnections buried in trenches | 5,595,937 | No | NEC Corporation | Tokyo, JP | Mikagi; Kaoru | Tokyo, JP | April 12, 1996 | January 21, 1997 | |
| 5,589,280 | Metal on plastic films with adhesion-promoting layer | 5,589,280 | No | Southwall Technologies Inc. | Palo Alto, CA | Gibbons; Kevin P.:Lau; Louis C.:Woodard; Floyd E. | Sunnyvale, CA:Alameda, CA:Los Altos, CA | February 5, 1993 | December 31, 1996 | |
| 5,569,506 | Magnetic recording disk and disk drive with improved head-disk interface | 5,569,506 | No | International Business Machines Corporation | Armonk, NY | Jahnes; Christopher V.:Kaufman; James H.:Metin; Serhat:Mirzamaani; Mohammad T.:Wu; Anthony W. | Monsey, NY:San Jose, CA:San Jose, CA:San Jose, CA:San Jose, CA | October 6, 1993 | October 29, 1996 | |
| 5,567,525 | Brazing of diamond film to tungsten carbide | 5,567,525 | Yes
| Saint-Gobain/Norton Industrial Ceramics Corporation | Worcester, MA | Kapoor; Rakesh R.:Nagy; Bela G.:Bigelow; Louis K. | Shrewsbury, MA:Acton, MA:Boylston, MA | June 1, 1995 | October 22, 1996 | |
| 5,565,378 | Process of passivating a semiconductor device bonding pad by immersion in O.sub.2 or O.sub.3 solution | 5,565,378 | No | Mitsubishi Denki Kabushiki Kaisha | Tokyo, JP | Harada; Shigeru:Hagi; Kimio:Tsumura; Kiyoaki | Hyogo-ken, JP:Hyogo-ken, JP:Hyogo-ken, JP | December 29, 1992 | October 15, 1996 | |
| 5,563,426 | Thin film transistor | 5,563,426 | Yes
| Semiconductor Energy Laboratory Co., Ltd. | Kanagawa-ken, JP | Zhang; Hongyong:Uochi; Hideki:Takayama; Toru:Fukunaga; Takeshi:Takemura; Yasuhiko | Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP | November 18, 1994 | October 8, 1996 | |
| 5,560,839 | Methods of preparing cemented metal carbide substrates for deposition of adherent diamond coatings and products made therefrom | 5,560,839 | No | Valenite Inc. | Madison Heights, MI | Bennett; Stephen L.:Bhat; Deepak G.:Johnson; Darrell | Rochester Hills, MI:Troy, MI:Rochester Hills, MI | June 27, 1994 | October 1, 1996 | |
| 5,552,504 | Semi-crystalline cycloolefin copolymer film | 5,552,504 | No | Hoechst Aktiengesellschaft | Frankfurt am Main, DE | Bennett; Cynthia:Brekner; Michael-Joachim:Coutandin; Jochen:Herrmann-Schoenherr; Otto:Osan; Frank | Alzey, DE:Frankfurt, DE:Langenlonsheim, DE:Bensheim, DE:Kelkheim, DE | February 14, 1994 | September 3, 1996 | |
| 5,551,994 | Non-chromated oxide coating for aluminum substrates | 5,551,994 | Yes
| The Boeing Company | Seattle, WA | Schriever; Matthias P. | Kent, WA | August 9, 1994 | September 3, 1996 | |
| 5,547,121 | Brazing of diamond film to tungsten carbide | 5,547,121 | Yes
| Saint-Gobain/Norton Industrial Ceramics Corp. | Worcester, MA | Kapoor; Rakesh R.:Nagy; Bela G.:Bigelow; Louis K. | Shrewsbury, MA:Acton, MA:Boylston, MA | June 1, 1995 | August 20, 1996 | |
| 5,523,877 | Reduced near-infrared radiation transmitting ultraviolet protected, safety protected, electrochromic vehicular glazing | 5,523,877 | Yes
| Donnelly Corporation | Holland, MI | Lynam; Niall R. | Holland, MI | August 19, 1994 | June 4, 1996 | |
| 5,523,159 | Brazing of diamond film to tungsten carbide | 5,523,159 | Yes
| St. Gobain/Norton Industrial Ceramics Corp. | Worcester, MA | Kapoor; Rakesh R.:Nagy; Bela G.:Bigelow; Louis K. | Shrewsbury, MA:Acton, MA:Boylston, MA | June 1, 1995 | June 4, 1996 | |
| 5,523,158 | Brazing of diamond film to tungsten carbide | 5,523,158 | No | Saint Gobain/Norton Industrial Ceramics Corp. | Worcester, MA | Kapoor; Rakesh R.:Nagy; Bela G.:Bigelow; Louis K. | Shrewsbury, MA:Acton, MA:Boylston, MA | July 29, 1994 | June 4, 1996 | |
| 5,491,002 | Multilayer CVD diamond films | 5,491,002 | Yes
| General Electric Company | Worthington, OH | Slutz; David E. | Columbus, OH | March 8, 1995 | February 13, 1996 | |
| 5,467,882 | Signal line structure for a TFT-LCD and method for fabricating the same | 5,467,882 | No | Goldstar Co., Ltd. | Seoul, KR | Ahn; Byung C. | Kyungki-do, KR | October 29, 1993 | November 21, 1995 | |
| 5,453,659 | Anode plate for flat panel display having integrated getter | 5,453,659 | No | Texas Instruments Incorporated | Dallas, TX | Wallace; Robert M.:Gnade; Bruce E.:Shen; Chi-Cheong:Levine; Jules D.:Taylor; Robert H. | Dallas, TX:Dallas, TX:Richardson, TX:Dallas, TX:Richardson, TX | June 10, 1994 | September 26, 1995 | |
| 5,451,366 | Product of a halogen containing Ti-Al system intermetallic compound having a superior oxidation and wear resistance | 5,451,366 | No | Sumitomo Light Metal Industries, Ltd. | JP | Kumagai; Masaki:Shibue; Kazuhisa:Kim; Mok-soon:Furuyama; Tsutomu | Nagoya, JP:Nagoya, JP:Nagoya, JP:Nagoya, JP | July 13, 1993 | September 19, 1995 | |
| 5,442,478 | Electrochromic device using mercaptans and organothiolate compounds | 5,442,478 | Yes
| The Regents, University of California | Berkeley, CA | Lampert; Carl M.:Ma; Yan-ping:Doeff; Marca M.:Visco; Steven | El Sobrante, CA:Berkeley, CA:Hayward, CA:Berkeley, CA | April 23, 1992 | August 15, 1995 | |
| 5,439,785 | Photographic elements comprising antistatic layers of vanadium pentoxide, epoxy-silane, and sulfopolymer | 5,439,785 | Yes
| Minnesota Mining and Manufacturing Company | St. Paul, MN | Boston; David R.:Kausch; William L.:Martino; Elio:Morrison; Eric D.:Valsecchi; Alberto | Woodbury, MN:Cottage Grove, MN:Carcare, IT:West St. Paul, MN:Vado Ligure, IT | July 19, 1994 | August 8, 1995 | |
| 5,424,246 | Method of manufacturing semiconductor metal wiring layer by reduction of metal oxide | 5,424,246 | No | Kabushiki Kaisha Toshiba | Kawasaki, JP | Matsuo; Mie:Okano; Haruo:Hayasaka; Nobuo:Suguro; Kyoichi:Miyajima; Hideshi:Wada; Jun-ichi | Yokohama, JP:Tokyo, JP:Yokosuko, JP:Yokohama, JP:Tokyo, JP:Yokohama, JP | July 30, 1993 | June 13, 1995 | |
| 5,403,772 | Method for manufacturing semiconductor device | 5,403,772 | No | Semiconductor Energy Laboratory Co., Ltd. | Kanagawa, JP | Zhang; Hongyong:Uochi; Hideki:Takayama; Toru:Fukunaga; Takeshi:Takemura; Yasuhiko | Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP:Kanagawa, JP | December 3, 1993 | April 4, 1995 | |
| 5,401,981 | Threshold switching device | 5,401,981 | Yes
| Dow Corning Corporation | Midland, MI | Michael; Keith W.:Pernisz; Udo C. | Midland, MI:Midland, MI | June 6, 1994 | March 28, 1995 | |
| 5,363,821 | Thermoset polymer/solid lubricant coating system | 5,363,821 | No | Ford Motor Company | Dearborn, MI | Rao; V. Durga N.:Kabat; Daniel M.:Lizotte; Brian M. | Bloomfield Hills, MI:Oxford, MI:Howell, MI | July 6, 1993 | November 15, 1994 | |
| 5,362,710 | Process for preparing high Tc superconducting material | 5,362,710 | Yes
| Sumitomo Electric Industries, Ltd. | Osaka, JP | Fujita; Nobuhiko:Kobayashi; Tadakazu:Itozaki; Hideo:Tanaka; Saburo:Yazu; Shuji:Jodai; Tetsuji | Hyogo, JP:Hyogo, JP:Hyogo, JP:Hyogo, JP:Hyogo, JP:Hyogo, JP | December 28, 1992 | November 8, 1994 | |
| 5,360,765 | Method of forming electrodes of semiconductor device | 5,360,765 | No | Nippondenso Co., Ltd. | Kariya, JP | Kondo; Ichiharu:Yoneyama; Takao:Yamaoka; Masami | Nagoya, JP:Sunomata, JP:Anjo, JP | July 17, 1992 | November 1, 1994 | |
| 5,349,205 | Thin-film transistor array with anodic oxide for use in a liquid crystal display | 5,349,205 | No | Matsushita Electric Industrial Co., Ltd. | Osaka, JP | Kobayashi; Ikunori:Nakamura; Kazuyoshi:Matsunaga; Koji:Takeda; Mamoru:Matsuoka; Tomizo | Sakai, JP:Kadoma, JP:Katano, JP:Hirakata, JP:Neyagawa, JP | December 1, 1992 | September 20, 1994 | |
| 5,348,773 | Threshold switching device | 5,348,773 | Yes
| Dow Corning Corporation | Midland, MI | Michael; Keith W.:Pernisz; Udo C. | Midland, MI:Midland, MI | June 28, 1993 | September 20, 1994 | |
| 5,339,211 | Variable capacitor | 5,339,211 | Yes
| Dow Corning Corporation | Midland, MI | Pernisz; Udo C.:Michael; Keith W. | Midland, MI:Midland, MI | October 26, 1992 | August 16, 1994 | |
| 5,338,422 | Device and method for depositing metal oxide films | 5,338,422 | No | The BOC Group, Inc. | Murray Hill, NJ | Belkind; Abraham I.:Wamboldt; Leonard:Wolfe; Jesse D. | North Plain Field, NJ:Huntington, MA:San Ramon, CA | September 29, 1992 | August 16, 1994 | |
| 5,320,689 | Surface modified copper alloys | 5,320,689 | Yes
| Olin Corporation | New Haven, CT | Mahulikar; Deepak:Mravic; Brian | Madison, CT:North Haven, CT | March 1, 1993 | June 14, 1994 | |
| 5,308,792 | Method for fabricating semiconductor device | 5,308,792 | No | NEC Corporation | Tokyo, JP | Okabayashi; Hidekazu:Endo; Shoichi | Tokyo, JP:Kyoto, JP | August 6, 1992 | May 3, 1994 | |
| 5,288,535 | Electrode for electroviscous fluid | 5,288,535 | Yes
| Tonen Corporation | Tokyo, JP | Kanbara; Makoto:Hayafune; Masahiko:Tomizawa; Hirotaka:Arai; Katsuya | Ooi, JP:Ooi, JP:Ooi, JP:Ooi, JP | November 25, 1992 | February 22, 1994 | |
| 5,286,712 | High TC superconducting film | 5,286,712 | Yes
| Sumitomo Electric Industries, Ltd. | Osaka, JP | Fujita; Nobuhiko:Kobayashi; Tadakazu:Itozaki; Hideo:Tanaka; Saburo:Yazu; Shuji:Jodai; Tetsuji | Hyogo, JP:Hyogo, JP:Hyogo, JP:Hyogo, JP:Hyogo, JP:Hyogo, JP | September 30, 1992 | February 15, 1994 | |
| 5,283,545 | Variable resistors | 5,283,545 | Yes
| Dow Corning Corporation | Midland, MI | Pernisz; Udo C. | Midland, MI | July 20, 1992 | February 1, 1994 | |
| 5,271,797 | Method for patterning metal oxide thin film | 5,271,797 | No | Rohm Co., Ltd. | Kyoto, JP | Kamisawa; Akira | Kyoto, JP | August 5, 1992 | December 21, 1993 | |
| RE34,469 | Solid state electrochromic light modulator | RE34,469 | N/A | |||||||
| 5,239,406 | Near-infrared reflecting, ultraviolet protected, safety protected, electrochromic vehicular glazing | 5,239,406 | Yes
| Donnelly Corporation | Holland, MI | Lynam; Niall R. | Holland, MI | July 18, 1991 | August 24, 1993 | |
| 5,213,638 | Surface modified copper alloys | 5,213,638 | Yes
| Olin Corporation | New Haven, CT | Mahulikar; Deepak:Mravic; Brian | Madison, CT:North Haven, CT | January 30, 1992 | May 25, 1993 | |
| 5,198,285 | Hard and lubricant thin film of iron base metallic material coated with amorphous carbon-hydrogen-silicon | 5,198,285 | No | Kabushiki Kaisha Toyota Chuo Kenkyusho | Aichi, JP | Arai; Tohru:Oguri; Kazuyuki | Aichi, JP:Aichi, JP | December 27, 1990 | March 30, 1993 | |
| 5,171,411 | Rotating cylindrical magnetron structure with self supporting zinc alloy target | 5,171,411 | No | The BOC Group, Inc. | New Providence, NJ | Hillendahl; James W.:Palmer; J. Glen | Vacaville, CA:Concord, CA | May 21, 1991 | December 15, 1992 | |
| 5,166,646 | Integrated tunable resonators for use in oscillators and filters | 5,166,646 | No | Motorola, Inc. | Schaumburg, IL | Avanic; Branko:Benenati; Robert L. | Miami, FL:Tamarac, FL | February 7, 1992 | November 24, 1992 | |
| 5,166,381 | Blocking layer for photoreceptors | 5,166,381 | Yes
| Xerox Corporation | Stamford, CT | Teuscher; Leon A.:Ziolo; Ronald F. | Webster, NY:Webster, NY | October 17, 1991 | November 24, 1992 | |
| 5,162,158 | Low noise magnetic thin film longitudinal media | 5,162,158 | No | Magnetic Peripherals Inc. | Minneapolis, MN | Christner; Jodie A.:Ranjan; Rajiv | Minnetonka, MN:Edina, MN | July 24, 1989 | November 10, 1992 | |
| 5,162,144 | Process for metallizing substrates using starved-reaction metal-oxide reduction | 5,162,144 | No | Motorola, Inc. | Schaumburg, IL | Brown; Vernon L.:Johnson; Julia S.:Magera; Yaroslaw A. | Barrington, IL:Schaumburg, IL:Arlington Heights, IL | August 1, 1991 | November 10, 1992 | |
| 5,142,406 | Electrochromic optical switching device | 5,142,406 | No | The Regents of the University of California | Oakland, CA | Lampert; Carl M.:Visco; Steven J. | El Sobrante, CA:Berkeley, CA | October 30, 1990 | August 25, 1992 | |
| 5,112,650 | Chemical vapor deposition of metal chalcogenide films | 5,112,650 | No | Wayne State University | Detroit, MI | Winter; Charles H.:Lewkebandara; T. Suren | Grosse Pointe Park, MI:Detroit, MI | April 10, 1991 | May 12, 1992 | |
| 5,100,764 | Method of making patterned metal oxide films comprising a sol-gel of metal oxide and a photoactive compound | 5,100,764 | No | Iowa State University Research Foundation, Inc. | Ames, IA | Paulson; Bradley A.:Landin; Allen R. | Ames, IA:Ames, IA | December 26, 1989 | March 31, 1992 | |
| 5,091,278 | Blocking layer for photoreceptors | 5,091,278 | No | Xerox Corporation | Stamford, CT | Teuscher; Leon A.:Ziolo; Ronald F. | Webster, NY:Webster, NY | August 31, 1990 | February 25, 1992 | |
| 5,069,771 | Molten salt electrolysis with non-consumable anode | 5,069,771 | No | Moltech Invent S.A. | LU | Nguyen; Thinh:Lazouni; Adbelkrim:Doan; Kim S. | Onex, CH:Geneva, CH:Onex, CH | April 28, 1989 | December 3, 1991 | |
| 4,963,394 | Method for producing thin metal films by vapor-deposition | 4,963,394 | No | Siemens Aktiengesellschaft | Berlin and Munich, DE | Willer; Josef | Oberschleissheim, DE | April 12, 1989 | October 16, 1990 | |
| 4,938,571 | Solid state electrochromic light modulator | 4,938,571 | Yes
| n/a | n/a | Cogan; Stuart F.:Rauh; R. David | 111 Downey St., Norwood, MA 02062:111 Downey St., Norwood, MA 02062 | June 16, 1988 | July 3, 1990 | |
| 4,913,949 | Planar, multilayered, laser-optical recording material | 4,913,949 | No | BASF Aktiengesellschaft | Ludwigshafen, DE | Steininger; Helmut:Binder; Horst | Worms, DE:Lampertheim, DE | July 8, 1988 | April 3, 1990 | |
| 4,888,203 | Hydrolysis-induced vapor deposition of oxide films | 4,888,203 | No | Massachusetts Institute of Technology | Cambridge, MA | Rothschild; Mordechai:Black; Jerry G.:Ehrlich; Daniel J. | Newton, MA:Lincoln, MA:Lexington, MA | November 13, 1987 | December 19, 1989 | |
| 4,841,293 | Process for displaying information | 4,841,293 | No | Fuji Photo Film Co., Ltd. | Kanagawa, JP | Takimoto; Masaaki | Tokyo, JP | March 3, 1987 | June 20, 1989 | |
| 4,834,834 | Laser photochemical etching using surface halogenation | 4,834,834 | No | Massachusetts Institute of Technology | Cambridge, MA | Ehrlich; Daniel J.:Rothschild; Mordecai | Lexington, MA:Newton, MA | November 20, 1987 | May 30, 1989 | |
| 4,786,570 | Layered, flexible electrophotographic imaging member having hole blocking and adhesive layers | 4,786,570 | No | Xerox Corporation | Stamford, CT | Yu; Robert C. U.:Horgan; Anthony M.:Sullivan; Donald P.:Bergfjord; John A. | Webster, NY:Pittsford, NY:Rochester, NY:Macedon, NY | April 21, 1987 | November 22, 1988 | |
| 4,737,781 | Process for displaying information | 4,737,781 | No | Fuji Photo Film Co., Ltd. | Kanagawa, JP | Robillard; Jean J. A. | Limerick, IE | February 27, 1986 | April 12, 1988 | |
| 4,690,875 | High vacuum cast ingots | 4,690,875 | Yes
| Degussa Electronics Inc., Materials Division | Morgan Hill, CA | Hunt, deceased; Charles d'A. | late of Petaluma, CA | July 2, 1986 | September 1, 1987 | |
| RE32,464 | Thin film recording and method of making | RE32,464 | N/A | |||||||
| 4,677,032 | Vertical magnetic recording media with multilayered magnetic film structure | 4,677,032 | No | International Business Machines Corporation | Armonk, NY | Robinson; Clifford J. | San Jose, CA | September 23, 1985 | June 30, 1987 | |
| 4,647,947 | Optical protuberant bubble recording medium | 4,647,947 | Yes
| Tokyo Shibaura Denki Kabushiki Kaisha | Kawasaki, JP | Takeoka; Yoshikatsu:Yasuda; Nobuaki | Kawasaki, JP:Zushi, JP | September 13, 1985 | March 3, 1987 | |
| 4,574,298 | III-V Compound semiconductor device | 4,574,298 | No | Tokyo Shibaura Denki Kabushiki Kaisha | JP | Yamagishi; Haruo:Kamo; Hisao | Fujisawa, JP:Yokohama, JP | December 23, 1983 | March 4, 1986 | |
| 4,569,924 | Metal carbon catalyst preparation | 4,569,924 | Yes
| n/a | n/a | Ozin; Geoffrey A.:Andrews; Mark P. | 63 Gormley Ave., Toronto, Ontario, CA:374 Markham St., Toronto, Ontario, CA | November 30, 1983 | February 11, 1986 | |
| 4,566,937 | Electron beam enhanced surface modification for making highly resolved structures | 4,566,937 | No | The United States of America as represented by the United States | Washington, DC | Pitts; John R. | Golden, CO | October 10, 1984 | January 28, 1986 | |
| 4,539,572 | Optical recording medium | 4,539,572 | Yes
| Minnesota Mining and Manufacturing Company | St. Paul, MN | Robbins; William B.:Willson; Richard F.:Freese; Robert P. | Maplewood, MN:Hudson, WI:Lake Elmo, MN | February 15, 1983 | September 3, 1985 | |
| 4,522,844 | Corrosion resistant coating | 4,522,844 | No | The United States of America as represented by the Administrator, | Washington, DC | Khanna; Satish K.:Thakoor; Anilkumar P.:Williams; Roger M. | Pasadena, CA:Pasadena, CA:Azusa, CA | September 30, 1983 | June 11, 1985 | |
| 4,504,552 | Integrated resistor of niobium oxide passivating ring, gold corrosion barrier, and titanium resistive layer | 4,504,552 | Yes
| International Business Machines Corporation | Armonk, NY | Kim; Kwang K. | Poughkeepsie, NY | March 16, 1984 | March 12, 1985 | |
| 4,440,841 | Photomask and photomask blank | 4,440,841 | No | Dai Nippon Insatsu Kabushiki Kaisha | JP | Tabuchi; Kazuhiro | Tsurugashima, JP | November 4, 1981 | April 3, 1984 | |
| 4,411,963 | Thin film recording and method of making | 4,411,963 | Yes
| n/a | n/a | Aine; Harry E. | 1804 Stierlin Rd., Mountain View, CA 94040 | July 6, 1981 | October 25, 1983 | |
| 4,321,299 | Strong thin membrane structure for use as solar sail comprising substrate with reflective coating on one surface and an infra red emissivity increasing coating on the other surface | 4,321,299 | Yes
| n/a | n/a | Frosch; Robert A. Administrator of the National Aeronautics and Space:Frazer; Robert E. | La Canada, CA:La Canada, CA | December 21, 1979 | March 23, 1982 | |
| 4,297,189 | Deposition of ordered crystalline films | 4,297,189 | No | Rockwell International Corporation | El Segundo, CA | Smith, Jr.; Elroy C.:Yao; Shi K. | La Habra, CA:Anaheim, CA | June 27, 1980 | October 27, 1981 | |
| 4,277,147 | Display device having reduced electrochromic film dissolution | 4,277,147 | No | General Motors Corporation | Detroit, MI | Arnoldussen; Thomas C. | Birmingham, MI | January 15, 1979 | July 7, 1981 | |
| 4,181,754 | In situ method of preparing modified titanium dioxide photoactive electrodes | 4,181,754 | No | GTE Laboratories Incorporated | Waltham, MA | McKinzie; Howard:Trickett; Elizabeth A. | Framingham, MA:Acton, MA | June 22, 1978 | January 1, 1980 | |
| 4,169,911 | Porous carbon fiber material with a thin metal film covering each fiber | 4,169,911 | No | Toray Industries, Inc. | Tokyo, JP | Yoshida; Kazuo:Tada; Shinsaku:Kitamura; Atsushi | Otsu, JP:Otsu, JP:Otsu, JP | April 26, 1978 | October 2, 1979 | |
| 4,164,604 | Leader or trailer tape for a magnetic recording medium | 4,164,604 | No | Fuji Photo Film Co., Ltd. | Kanagawa, JP | Tamai; Yasuo:Fujiyama; Masaaki:Amari; Hiroshi | Odawara, JP:Odawara, JP:Odawara, JP | September 8, 1977 | August 14, 1979 | |
| 4,152,386 | Method for the production of superconductors consisting of a polymer of glass matrix with finely dispersed particles | 4,152,386 | No | Battelle-Institute e.V. | Frankfurt am Main, DE | Winter; Heinrich | Eschborn, DE | April 14, 1977 | May 1, 1979 | |
| 4,137,481 | Electroluminescent phosphor panel | 4,137,481 | No | The Secretary of State of Defence in Her Britannic Majesty's Government | London, GB | Hilsum; Cyril:Kirton; John:Mears; Adrian L. | Malvern, GB2:Malvern, GB2:Cheltenham, GB2 | October 18, 1977 | January 30, 1979 | |
| 4,132,743 | Reduction of metal surface-initiated cracking in dehydrogenation reactors | 4,132,743 | No | The Dow Chemical Company | Midland, MI | Castor; William M.:Taylor; Barbara S. | Richwood, TX:Lake Jackson, TX | March 13, 1978 | January 2, 1979 | |
| 4,090,100 | Gas discharge display device with protected dielectric | 4,090,100 | No | Owens-Illinois, Inc. | Toledo, OH | Byrum, Jr.; Bernard W. | Toledo, OH | March 21, 1975 | May 16, 1978 | |
| 4,078,299 | Method of manufacturing flexible superconducting composite compound wires | 4,078,299 | Yes
| The Furukawa Electric Co. Ltd. | Tokyo, JA | Furuto; Yoshio:Suzuki; Takuya:Ikeda; Masaru:Tanaka; Yasuzo:Meguro; Shinichiro:Miura; Takeshi | Oiso, JA:Kawasaki, JA:Tokyo, JA:Yokohama, JA:Kawasaki, JA:Yokohama, JA | April 13, 1976 | March 14, 1978 | |
| 4,067,836 | Environmentally degradable compositions exposed to actinic or ionizing radiation and process | 4,067,836 | Yes
| Union Carbide Corporation | New York, NY | Potts; James Edward:Cornell; Stephen Watson:Sracic; Albert Martin | Bernards Township, NJ:Naperville, IL:Gladstone, NJ | August 20, 1975 | January 10, 1978 | |
| 3,935,141 | Environmentally degradable ethylene polymeric compositions | 3,935,141 | Yes
| Union Carbide Corporation | New York, NY | Potts; James Edward:Cornell; Stephen Watson:Sracic; Albert Martin | Bernards Township, NJ:Dunellen, NJ:Gladstone, NJ | June 28, 1972 | January 27, 1976 |